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Visible Light Emission from Erbium Doped Yttria Stabilized Zirconia

Published online by Cambridge University Press:  01 February 2011

Michael Cross  and
Walter Varhue
Michael Cross
Affiliation:
Materials Science Program, Dept of Electrical and Computer Eng, University of Vermont, Burlington VT 05405, U.S.A
Walter Varhue
Affiliation:
Materials Science Program, Dept of Electrical and Computer Eng, University of Vermont, Burlington VT 05405, U.S.A
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Abstract

ABSTRACT: One of the major shortcomings of silicon (Si) as a semiconductor material is its inability to yield efficient light emission. There has been a continued interest in adding rare earth ion impurities such as erbium (Er) to the Si lattice to act as light emitting centers. The low band gap of Si however has complicated this practice by quenching and absorbing this possible emission. Increasing the band gap of the host has been successfully tried in the case of gallium nitride (GaN) [1] and Si-rich oxide (SRO) [2] alloys. A similar approach has been tried here, where Er oxide (ErOx) nanocrystals have been formed in a yttria stabilized zirconia (YSZ) host deposited on a Si (100) substrate. The YSZ is deposited as a heteroepitaxial, insulating layer on the Si substrate by a reactive sputtering technique. The Er is also incorporated by a sputtering process from a metallic target and its placement in the YSZ host can be easily controlled. The device structure formed is a simple metal contact/insulator/phosphor sandwich. The device has been found to emit visible green light at low bias voltages. The advantage of this material is that it is much more structured than SiO2 which can theoretically lead to higher emission intensity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 789 , 2003 , N11.8
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Garter, M., Birkhahn, R., Steckl, A.J., and Scofield, J., MRS Internet J, Nitride Semiconductor, Res 4S1, G11.3 (1999).Google Scholar
2. Whitaker, T., Compound Semiconductors, 8, no. 11 (2002).Google Scholar
3. Chen, T., Agarwal, A., Thilderkvist, A., Michel, j., Kimerling, L., Journal of Electronic materials, 29, no.7, 973–978 (2000)Google Scholar
4. Castagna, M., Coffa, S., Monaco, M., Caristia, L., Messina, A., Mangano, R., Bongiorno, C., Physica E, 16, 547–553 (2003)Google Scholar
5. Gourbilleau, F., Choppinet, P., Dufour, C., Levalois, M., Madelon, R., Sada, C., Battaglin, G., Rizk, R., Physica E, 16, 341–346 (2003)Google Scholar
6. Pacifici, D., Irrera, A., Franzo, G., Miritello, M., Iacona, F., Priolo, F., Physica E, 16, 331–340 (2003)Google Scholar
7. De La Torre, J., Souifi, A., Poncet, A., Busseret, C., Lemiti, M., Bremond, G., Guillot, G., Gonzalez, O., Garrido, B., Morante, J., Bonafos, C., Physica E, 16, 326–330 (2003)Google Scholar
8. Wang, S., Amekura, H., Eckau, A., Carius, R., Buchal, Ch., Nuclear Instruments and Methods in Physics Research B, 148, 481–485 (1999)Google Scholar
9. Bell, M., Anjos, V., Physica E, 16, 137–138 (2003)Google Scholar
10. Zavada, J., Thaik, M., Hommerich, U., MacKenzie, J., Abernathy, C., Ren, F., Shen, H., Pamulapati, J., Jiang, h., Lin, J., Wilson, R., Symposium G: GaN and Related Alloys, G11.1 Google Scholar
11. Chen, T., Agarwal, A., Thilderkvist, A., Michel, j., Kimerling, L., Journal of Electronic materials, 29, no. 7, 973–978 (2000)Google Scholar