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Visible Blind uv GaN Photovoltaic Detector Arrays Grown by rf Atomic Nitrogen Plasma MBE

Published online by Cambridge University Press:  10 February 2011

J.M. Van Hove ,
P.P. Chow ,
R. Hickman ,
A.M. Wowchak ,
J.J. Klaassen  and
C.J. Polley
J.M. Van Hove
Affiliation:
SVT Associates, 7620 Executive Dr., Eden Prairie, MN 55344, [email protected]
P.P. Chow
Affiliation:
SVT Associates, 7620 Executive Dr., Eden Prairie, MN 55344, [email protected]
R. Hickman
Affiliation:
SVT Associates, 7620 Executive Dr., Eden Prairie, MN 55344, [email protected]
A.M. Wowchak
Affiliation:
SVT Associates, 7620 Executive Dr., Eden Prairie, MN 55344, [email protected]
J.J. Klaassen
Affiliation:
SVT Associates, 7620 Executive Dr., Eden Prairie, MN 55344, [email protected]
C.J. Polley
Affiliation:
SVT Associates, 7620 Executive Dr., Eden Prairie, MN 55344, [email protected]
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Abstract

RF atomic nitrogen plasma molecular beam epitaxy (MBE) was used to deposit gallium nitride (GaN) p-i-n junction photovoltaic detectors on (0001) sapphire. The detectors consisted of a bottom contact layer n-type silicon doped to 5 × 1018 cm−3. The intrinsic layer was undoped and possessed an n-type background carrier concentration of 1 × 1016 cm−3. The top /p-GaN layer was doped with magnesium to give a Hall concentration of 5 × 1017 cm−3. The p-type GaN cathodoluminescence (CL) spectra showed a strong 372 nm emission level in contrast to the 430 nm level observed in MOCVD samples. These layers were fabricated into 1 × 10 element detector arrays using a chlorine-based reactive ion etch (RIE) and refractory metal ohmic contacts. Peak responsivity of 0.11 AAV on detectors without anti-reflection coating were obtained at the GaN bandedge of 360 nm. The ultraviolet (UV) to visible rejection ratio was greater than 103 − 104 and was accredited to the reduction of the yellow defect levels in MBE material. Preliminary results on AlxGa1−xN detectors with responsivity peaks at 313 and 343 nm are presented as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1227
Copyright
Copyright © Materials Research Society 1997

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References

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