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The Visible and the Infrared Luminescence Bands as a Tool for Characterization of the Porous Silicon Bandstructure

Published online by Cambridge University Press:  28 February 2011

V. Petrova-Koch ,
T. Muschik ,
G. Polisski  and
D. Kovalev
V. Petrova-Koch
Affiliation:
Physik-Department E 16, Technische Universität Munchen, James-Franck-Straβe, 85747 Garching, Germany.
T. Muschik
Affiliation:
Physik-Department E 16, Technische Universität Munchen, James-Franck-Straβe, 85747 Garching, Germany.
G. Polisski
Affiliation:
Physik-Department E 16, Technische Universität Munchen, James-Franck-Straβe, 85747 Garching, Germany.
D. Kovalev
Affiliation:
Physik-Department E 16, Technische Universität Munchen, James-Franck-Straβe, 85747 Garching, Germany.
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Abstract

The visible and the infrared photoluminescence bands in porous Si have been studied at low temperature for two series of samples: one in which the size of the crystallites has been varied and another in which the degree of surface degradation has been changed. It is shown that the relation of the two bands can be explored for characterization of the porous Si bandstructure. The size- and the surface dependence of the valence band and of the conduction band related states is discussed. A model is proposed for explanation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 483
Copyright
Copyright © Materials Research Society 1995

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References

sReferences

1 Lehmann, V., Goesele, U.: Appl.Phys.Lett.58(1991)856.Google Scholar
2 Canham, L.: Appl.Phys.Lett.,57 (1990) 1046 Google Scholar
3 Wurfel, B., Petrova-Koch, V., Hofreiter, S. and Nikolov, A. to be published.Google Scholar
4 Meyer, B.K., Petrova-Koch, V., Muschik, T., Linke, H., Omling, P., Lehmann, V.: Appl.Phys.Lett. 63 (1993)1930.Google Scholar
5 Koch, F., Petrova-Koch, V., Muschik, T.: J.Lumin. 57(1993)271.Google Scholar
6 Vogl, P., Rieger, M.M.,Majewski, J.A.,Abstreiter, G.: Physica Scripta Band T49( 1993)476.Google Scholar
7 Littau, K.A.,Szajowski, P.F., Muller, A.J.,Kortan, A.R.,Brus, L.E.: J.Phys.Chem.97(1993)1224.Google Scholar
8 Fojtik, A.,Henglein, A.: Chem.Phys.Lett.221(1994)363.Google Scholar
9 Pickering, C.,Beale, M.J., Robbins, D.J., Pearson, P.J., Greef, R.: J.Phys. C:Solid State Phys.17 (1984) 6535.Google Scholar
10 Koch, F.: MRS Proc.298(1993)319.Google Scholar
11 Koch, F., Petrova-Koch, V.: in "Porous Silicon" ed.Zhe, Chuan, Feng, and R.Tsu.Google Scholar
12 Petrova-Koch, V., Muschik, T., EMRS (1994), to appear in Thin Solid Films.Google Scholar
13 Canham, L.T., Leong, W.Y., Cox, T.I., Beale, M.I.J., Nash, K.J., Calcott, P., Brumhead, D., Taylor, L.L., Marsh, K.J.: 21 ICPS. World Scientific, Singapore(1993) 1423.Google Scholar
14 Stuzmann, M., Weber, J., Brandt, M.S.,Fuchs, H.D., Rosenbauer, M., Deak, P., Hoepner, A., Breitschwerdt, A.: Festkoerperprobleme 32(1993) 179.Google Scholar
15 Mochizuki, Y., Mizuta, M., Ochiai, Y., Matsui, S., Ohkubo, N.: Phys.Rev. B46 (1992)12353.Google Scholar
16 Meyer, B.K., Hofmann, D.M., Stadler, W., Petrova-Koch, V.,, Koch, F., Omling, P., Emanuelsson, P. : J.of Lumin. 57(1993)137.Google Scholar
17 Meyer, B.K., Hofinann, D.M., Stadler, W., Petrova-Koch, V., Koch, F., Omling, P., Emaanuelsson, P.: Appl.Phys.Lett.63(1993)2120.Google Scholar
18 Fauchet, P.M., Hedgui, E.E., Raisanen, A., Brilson, L.J., Seiferth, F., Kurinec, S.K., Gao, Y., Peng, C., Tsybeskov, L.J.. MRS Proc.298(1993).Google Scholar
19 Ochiai, Y., Ichihashi, T., Ono, H., Uchida, H., Mochizuki, Y.: submitted to Appl.Phys.Lett.Google Scholar
20 Kux, A., Koch, F.: to be published.Google Scholar
21 Mauckner, G., Rebitzer, W., Thonke, K. and R.Sauer. Solid.State Comm.(1994).Google Scholar
22 Ren, S.Y., Dow, J.D.: Phys.Rev. B45(1992)6492.Google Scholar
23 Wang, L.W. and Zunger, A.: subm. to Phys.Rev.Lett.Google Scholar
24 Lannoo, M., Delerue, C., Allan, G.: J. Luminescence 57(1992)243.Google Scholar
25 Petrova-Koch, V., Muschik, T., Kux, A., Meyer, B.K., Koch, F., V.Lehmann:Appl.Phys.Lett. 61 (1992) 943 Google Scholar
26 Enachescu, M., Hartmann, E., Koch, F.: Apl. Phys. Lett. 64 (1994), 1365.Google Scholar
27 Muschik, T.: Thesis, Doctoral, TU Munich (1994).Google Scholar