Published online by Cambridge University Press: 26 February 2011
Substrate curvature measurements were used to monitor viscous flow in ion beam sputtered amorphous Si for temperatures ranging from 150 to 400 °C. The viscosity increases linearly with time, characteristic of a bimolecular defect annihilation process. This is consistent with the defects governing viscous flow being dangling bonds. The isoconfigurational activation enthalpy for the viscosity is 1.8 ±.3 eV.