Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-20T09:24:50.372Z Has data issue: false hasContentIssue false
  • English
  • Français

Very Low Temperature Deposition of Polycrystalline Silicon Films with Micro-Meter-Order Grains on SiO2

Published online by Cambridge University Press:  21 February 2011

Kun-Chin Wang ,
Tri-Rung Yew  and
Huey-Liang Hwang
Kun-Chin Wang
Affiliation:
Dept. of Elec. Eng., National Tsing-Hua University, Hsinchu, Taiwan, ROC
Tri-Rung Yew
Affiliation:
Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, ROC.
Huey-Liang Hwang
Affiliation:
Dept. of Elec. Eng., National Tsing-Hua University, Hsinchu, Taiwan, ROC
Get access

Abstract

This paper presents the results of very low temperature micro-meter-order polycrystalline silicon growth on SiO2 and glass substrates. The silicon films were deposited with high growth rate using hydrogen dilution method by the electron cyclotron resonance chemical vapor deposition at 250°C and without any thermal annealing. The polycrystallinity of silicon films was identified by plan-view transmission electron microscopy (TEM). The maximum grain size distinctly exceeds 1 μm Raman spectroscopy was used to identify the volume ratio of crystallinity in poly-Si films. Atomic force microscopy (AFM) and X-ray spectroscopy were used to study the surface morphology and film crystallinity, respectively. We believe that our work could possibly change the future course of the hydrogenated silicon research.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 581
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hsu, K. C. and Hwang, H. L., Appl. Phys. Lett. 61, 2075 (1992)Google Scholar
2. Hsu, K. C. and Hwang, H. L., Mat. Res. Soc. Symp. Proc. 259, 67 (1993).Google Scholar
3. Hsu, K. C., Chang, H., and Hwang, H. L., J. Appl. Phys., 73, 4841 (1993).Google Scholar
4. Tsai, C. C., Thompson, R., Doland, C., Ponce, F. A., Anderson, G. B., and Wacker, B., Mat. Res. Soc. Symp. Proc. 118, 49 (1988).Google Scholar
5. Wang, K. C., Hwang, H. L., and Yew, T. R., submmited to Appl. Phys. Lett. (1994).Google Scholar
6. Kaneko, T., Onisawa, K. I., Wakagi, M., Kita, Y., and Minemura, T., Jpn. J. Appl. Phys. 32, 4907 (1993)Google Scholar
7. Tsai, C. C., Anderson, G. B., and Thompson, R., Mat. Res. Soc. Sump. Proc, 192, 475 (1990).Google Scholar