Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T01:32:57.500Z Has data issue: false hasContentIssue false
  • English
  • Français

Vertically Increasing Well Thickness and In Content in GaInN MQW's due to V-shaped Pits

Published online by Cambridge University Press:  01 February 2011

Heiko Bremers ,
L. Hoffmann ,
D. Fuhrmann ,
U. Rossow  and
A. Hangleiter
Heiko Bremers
Affiliation:
[email protected], TU Braunschweig, Institute of Applied Physics, Mendelssohnstr. 2, Braunschweig, D-38106, Germany, ++49/531/3918527, ++49/531/3918511
L. Hoffmann
Affiliation:
[email protected], TU Braunschweig, Institute of Applied Physics, Mendelssohnstr. 2, Braunschweig, D-38106, Germany
D. Fuhrmann
Affiliation:
[email protected], TU Braunschweig, Institute of Applied Physics, Mendelssohnstr. 2, Braunschweig, D-38106, Germany
U. Rossow
Affiliation:
[email protected], TU Braunschweig, Institute of Applied Physics, Mendelssohnstr. 2, Braunschweig, D-38106, Germany
A. Hangleiter
Affiliation:
[email protected], TU Braunschweig, Institute of Applied Physics, Mendelssohnstr. 2, Braunschweig, D-38106, Germany
Get access

Abstract

In this work we investigate the influence of V-shaped pits on the growth of GaInN-GaN MQW's by TEM and x-ray diffraction measurements. We have grown different MQW's using low-pressure MOVPE and studied the influence of the number of QW's as well as of the depth of V-shaped pits. During the growth of the samples a material transport takes place from the pits to the c-plane. We show that the thickness of the GaInN QW's and of the GaN barriers is increased due to material transport. With increasing number of quantum wells the diameter of the pits increases, which leads to a super linear increase of these thicknesses. We present a model which describes the change in thickness due to material transport. Another consequence of material transport is a lateral fluctuation in thickness with a characteristic length on the order of the distances between the dislocations.

Keywords

III-Vtransmission electron microscopy (TEM)x-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-39
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., Mukai, S. and Seno, M., Appl. Phys. Lett. 64, 1687 (1994)Google Scholar
2. Hangleiter, A., Hitzel, F., Fuhrmann, D., Rossow, U., Ade, G. and Hinze, P., Phys. Rev. Lett. 95, 127402 (2005)Google Scholar