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Versatile Nanodeposition of Dielectrics and Metals by Non-contact Direct-Write Technology

Published online by Cambridge University Press:  11 February 2011

H. D. Wanzenboeck ,
H. Langfischer ,
S. Harasek ,
B. Basnar ,
H. Hutter  and
E. Bertagnolli
H. D. Wanzenboeck
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7- E362; 1040 Vienna, AUSTRIA
H. Langfischer
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7- E362; 1040 Vienna, AUSTRIA
S. Harasek
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7- E362; 1040 Vienna, AUSTRIA
B. Basnar
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7- E362; 1040 Vienna, AUSTRIA
H. Hutter
Affiliation:
Vienna University of Technology, Institute for Analytical Chemistry; Getreidemarkt 9 - E 151; 1060 Vienna, AUSTRIA
E. Bertagnolli
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7- E362; 1040 Vienna, AUSTRIA
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Abstract

Direct-write techniques allow processing in the nanometer range and have become powerful methods for rapid prototyping of microelectronic circuits and micro-electro-mechanical systems (MEMS). Chemical reactions are initiated by a focused beam leading to deposition of solid material on literally any surface. We have used this method to deposit metals such as tungsten and dielectrics such as silicon oxide using a focused ion beam (FIB) with 10 to 50 kV acceleration voltage. Controlled guidance of the beam allows deposition of both metallic and dielectric material with features in the 100 nm range. The deposition of separate structures of metallic and dielectric material deposited next to each other is shown on samples of different roughness. 3-dimensional exemplary prototypes in the sub-μm range and multilayer structures demonstrate the versatility of this method for prototyping and mix-and-match approaches with commercial semiconductor devices. A characterization of the deposited material was performed to clarify chemical composition and surface morphology of deposited structures. The deposition parameters were found to influence the chemical composition and electronic properties of the material. Direct-write deposition of dielectrics and metals by FIB allows fabrication of 3-dimensional prototypes with custom-tailored material properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 758: Symposium LL – Rapid Prototyping Technologies , 2002 , LL4.5
Copyright
Copyright © Materials Research Society 2003

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References

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