Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T16:37:03.127Z Has data issue: false hasContentIssue false
  • English
  • Français

Versatile Nanodeposition of Dielectrics and Metals by Non-contact Direct-Write Technology

Published online by Cambridge University Press:  11 February 2011

H. D. Wanzenboeck ,
H. Langfischer ,
S. Harasek ,
B. Basnar ,
H. Hutter  and
E. Bertagnolli
H. D. Wanzenboeck
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7- E362; 1040 Vienna, AUSTRIA
H. Langfischer
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7- E362; 1040 Vienna, AUSTRIA
S. Harasek
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7- E362; 1040 Vienna, AUSTRIA
B. Basnar
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7- E362; 1040 Vienna, AUSTRIA
H. Hutter
Affiliation:
Vienna University of Technology, Institute for Analytical Chemistry; Getreidemarkt 9 - E 151; 1060 Vienna, AUSTRIA
E. Bertagnolli
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7- E362; 1040 Vienna, AUSTRIA
Get access

Abstract

Direct-write techniques allow processing in the nanometer range and have become powerful methods for rapid prototyping of microelectronic circuits and micro-electro-mechanical systems (MEMS). Chemical reactions are initiated by a focused beam leading to deposition of solid material on literally any surface. We have used this method to deposit metals such as tungsten and dielectrics such as silicon oxide using a focused ion beam (FIB) with 10 to 50 kV acceleration voltage. Controlled guidance of the beam allows deposition of both metallic and dielectric material with features in the 100 nm range. The deposition of separate structures of metallic and dielectric material deposited next to each other is shown on samples of different roughness. 3-dimensional exemplary prototypes in the sub-μm range and multilayer structures demonstrate the versatility of this method for prototyping and mix-and-match approaches with commercial semiconductor devices. A characterization of the deposited material was performed to clarify chemical composition and surface morphology of deposited structures. The deposition parameters were found to influence the chemical composition and electronic properties of the material. Direct-write deposition of dielectrics and metals by FIB allows fabrication of 3-dimensional prototypes with custom-tailored material properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 758: Symposium LL – Rapid Prototyping Technologies , 2002 , LL4.5
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Daniel, J.H., Moore, D.F., Walker, J.F., “Focused ion beams for microfabrication“, Engineering Science and Education Journal 1998(4), 53 (1998).Google Scholar
2. Murguia, J.E., Musil, C.R., Shepard, M.I., Lezec, H., Antoniadis, D.A., Melngailis, J., “Merging focused ion beam patterning and optical lithography in device and circuit fabrication“, Journal of Vacuum Science & Technology B 8(6), 1374 (1990).Google Scholar
3. Iliadis, A.A., Andronescu, S.N., Yang, W., Vispute, R.D., Stanishevsky, A., Orloff, J.H., Sharma, R.P., Venkatesan, T., Wood, M.C., Jones, K.A., “Pt and W Ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition”, Journal of Electronic Materials 28(3); 136 (1999).Google Scholar
4. Stanishevsky, A., Aggarwal, A.S., Prakash, A.S., Melngailis, J., Ramesh, R., “Focused ion-beam patterning of nanoscale ferroelectric capacitors”, Journal of Vacuum Science & Technology B 16(6), 3899 (1998).Google Scholar
5. Yutani, N., Suzuki, K., Enomoto, Y., “High-Tc Josephson Junctions on Micro V-shape groove prepared by focused ion beam”, IEEE Trans. Appl. Superconductivity 9(2), 2878 (1999).Google Scholar
6. Wanzenboeck, H.D., Langfischer, H., Lugstein, A., Bertagnolli, E., Grabner, U., Pongratz, P., Basnar, B., Smoliner, J., Gornik, E., “Effects of Ga-irradiation on properties of materials processed by a focused ion beam (FIB)”, in Ion Beam Synthesis and Processing of Advanced Materials, Materials Research Society Symposium Proceedings Vol., 2001, O6.6.1–9.Google Scholar
7. Wanzenboeck, H.D., Lugstein, A., Langfischer, H., Bertagnolli, E., Gritsch, M., Hutter, H., “Ion beam induced deposition of dielectric nanostructures“, Eighth International Conference on Dielectric Materials, Measurements and Applications (DMMA), Conf. Publ. No. 473, 2000, p. 485.Google Scholar