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Versatile High Rate Plasma Deposition and Processing with very high Frequency Excitation

Published online by Cambridge University Press:  15 February 2011

M. Heintze
M. Heintze*
Affiliation:
Institut für Niedertemperatur-Plasmaphysik, Robert Blum Str. 8–10, 17489 Greifswald, Germany
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Abstract

The interest in plasma deposition using very high frequency (VHF) excitation arose after the preparation of a-Si:H at high growth rates was demonstrated. Subsequently the improved process flexibility and the control of material properties offered by the variation of the plasma excitation frequency was recognized. The preparation of amorphous and microcrystalline thin films in a VHF-plasma is described. The increased growth rates have been attributed to an enhancement of film precursor formation at VHF, to the decreased sheath thickness as well as to an enhancement of the surface reactivity by positive ions. Plasma diagnostic investigations show that the parameters mainly affected by the excitation frequency are the ion flux to the electrodes as well as the sheaths potentials and widths, rather than the plasma density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 471
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Matsuda, A., Kaga, T., Tanaka, H. and Tanaka, K., Jpn. J. Appl. Phys. 23, L567 (1984)Google Scholar
2. Curtins, H., Wyrsch, N., Favre, M., Prasad, K., Breset, M., and Shah, A.V., in Amorphous Silicon Semiconductors - Pure and Hvdrogenated. ed. by Madan, A., Thompson, M., Alder, D., Hamakawa, Y. (Mat. Res. Symp. Proc. 95, Pittsburgh PA, 1987) p. 249 Google Scholar
3. Curtins, H., Wyrsch, N., and Shah, A.V., Plasma Chem. Plasma Proc. 7, 267 (1987)Google Scholar
4. Ganguly, G. and Matsuda, A., Phys. Rev. B 47, 3661 (1993)Google Scholar
5. Morin, P. and Roca i Cabarrocas, P., Mater. Res. Soc. Symp. Proc. 336, 281 (1994)Google Scholar
6. Chatham, H. and Bhat, P., Mater. Res. Soc. Symp. Proc. 149, 447 (1989)Google Scholar
7. Fischer, D., Keppner, H., Finger, F., Prasad, K., Shah, A. V., Proc. 10th E.C. Photovoltaic Solar Energy Conference, p. 201 (eds.: Luque, A., Sala, G., Palz, W., Dos Santos, G., and Helm, P., Kluwer Acad. Press, 1991)Google Scholar
8. Hautala, J., Saleh, Z., Westendorp, J.F.M., Meiling, H., Sherman, S. and Wagner, S., in Amorphous Silicon Technology - 1996, ed. by Hack, M., Schiff, E.A., Wagner, S., Matsuda, A., and Schropp, R. (Mat. Res. Soc. Symp. Proc. 420, Pittsburgh PA) p. 83 Google Scholar
9. Vepřek, S. and Mareček, V., Solid-State Electronics 11, 683 (1968)Google Scholar
10. Willeke, G., Spear, W.E., Jones, D.I. and LeComber, P.G., Phil. Mag. B. 46, 177 (1982)Google Scholar
11. Oda, S., Noda, J. and Matsumura, M, Mater. Res. Soc. Symp. Proc. 118, 117 (1988)Google Scholar
12. Prasad, K., Kroll, U., Finger, F., Shah, A., Dorier, J.-L, Howling, A., Baumann, J. and Schubert, M. in Amorphous Silicon Technology - 1991, ed. by Madan, A., Hamakawa, Y., Thompson, M.J., Taylor, P.C. and LeComber, P.G. (Mater. Res. Soc. Symp. Proc. 119, Pittsburgh 1991) p. 469.Google Scholar
13. Flückiger, R., Meier, J., Shah, A, Catana, A., Brunel, M., Nguyen, H.V., Collins, R.W. and Carius, R., in Amorphous Silicon Technology - 1994, ed. by Schiff, E.A., Hack, M., Madan, A., Powell, M. and Matsuda, A. (Mater. Res. Soc. Symp. Proc. 336, Pittsburgh 1994) p. 511 Google Scholar
14. Heintze, M. and Schmitt, M. in Amorphous Silicon Technology - 1996, ed. by Hack, M., Schiff, E.A., Wagner, S., Matsuda, A., and Schropp, R. (Mat. Res. Soc. Symp. Proc 420, Pittsburgh PA) p. 277 Google Scholar
15. Meier, J., Torres, P., Platz, R., Dubail, S., Kroll, U., Anna Selvan, J.A., Vaucher, N.P., Hof, Ch., Fischer, D., Keppner, H., Shah, A., Ufert, K.-D., Giannoules, P., Koehler, J., in Amorphous Silicon Technology - 1996, ed. by Hack, M., Schiff, E.A., Wagner, S., Matsuda, A., and Schropp, R. (Mat. Res. Soc. Symp. Proc 420, Pittsburgh PA), p. 3 Google Scholar
16. Heintze, M., Zedlitz, R. and Bauer, G.H., J. Phys. D: Appl. Phys. 26, 1781 (1993)Google Scholar
17. Howling, A.A., Dorier, J.-L., Hollenstein, Ch., Kroll, U. and Finger, F., J. Vac. Sci. Technol. A 10, 1080 (1992)Google Scholar
18. van Sark, W.G.J.H.M., Bezemer, J. and van der Weg, W.F., Surface and Coatings Technol. 74–75, 63 (1995)Google Scholar
19. Chatham, H. and Bhat, P., Mat. Res. Soc. Symp. Proc. 149, 447 (1989)Google Scholar
20. Beneking, C., J. Appl. Phys. 68, 4461 (1990)Google Scholar
21. Godyak, V.A. and Piejak, R.B., J. Vac. Sci. Technol. A 8, 3833 (1990)Google Scholar
22. Horwitz, C.M., J. Vac. Sci. Technol. A 1, 1795 (1983)Google Scholar
23. Finger, F., Kroll, U., Viret, V., Beyer, W., Tang, X.-M., Weber, J., Howling, A. and Hollenstein, Ch., J. Appl. Phys. 71, 5665 (1992)Google Scholar
24. Beneking, C., Finger, F. and Wagner, H., in Proc. 11th E.C. Photovoltaic Solar Energy Conference, ed. by Guimarães, L., Palz, W., De Reyff, C., Kiess, H. and Helm, P., (Harwood Academic Publishers Switzerland 1993), p. 586 Google Scholar
25. Heintze, M. and Zedlitz, R., J. Non-Cryst. Sol. 164–166, 55 (1993)Google Scholar
26. Karg, F., Böhm, H., Pierz, J., J. Non-Crast. Sol. 114, 477 (1989)Google Scholar
27. Paul, W., Jones, S.J., Turner, W.A., and Wickbold, P., J. Non-Crast. Sol. 141, 271 (1992)Google Scholar
28. Zedlitz, R., Heintze, M. and Bauer, G.H., in Amorphous Silicon Technology - 1993 ed. by Schiff, E.A., Thompson, M.J., Madan, A., Tanaka, K., LeComber, P. G. (Mat. Res. Soc. Symp. Proc. 297 Pittsburgh, PA 1993) p. 55 Google Scholar
29. Heintze, M. and Zedlitz, R., Progress in Photovoltaics 1, 214 (1993)Google Scholar
30. Finger, F., Hapke, P., Luysberg, M., Carius, R. and Wagner, H., Appl. Phys. Lett. 65 2588 (1994).Google Scholar
31. Heintze, M., Westlake, W., and Santos, P.V., J. Non-Cryst. Sol. 164–166, 83 (1993)Google Scholar
32. Brasefield, C.S., Phys. Rev. 35, 92 (1930)Google Scholar
33. Brown, S.C., in Gas Discharges II edited by Flügge, S. (Springer Verlag 1956), pp 531 - 575Google Scholar
34. Wertheimer, M.R., Moisan, M., Klemberg-Sapieha, J.E. and Claude, R., Pure and Appl. Chem. 60, 815 (1988)Google Scholar
35. Oda, S., Noda, J. and Matsumura, M., Jpn. J. Appl. Phys. 29, 1889 (1990)Google Scholar
36. Lister, G.G., J. Phys. D: Appl. Phys. 25, 1649 (1992)Google Scholar
37. Surendra, M. and Graves, D.B., Appl. Phys. Lett. 59, 2091 (1991)Google Scholar
38. Surendra, M. and Graves, D.B., IEEE Trans. Plasma Sci. 19, 144 (1991)Google Scholar
39. Birdsall, C.K., IEEE Trans. Plasma Sci. 19, 65 (1991)Google Scholar
40. Kitamura, T., Nakano, N., Makabe, T. and Yamaguchi, Y., Plasma Sources Sci. Technol. 2, 40 (1993)Google Scholar
41. Colgan, M.J., Meyyappan, M. and Murnick, D.E., Plasma Sources Sci. Technol. 3, 181 (1994)Google Scholar
42. Doyle, J.R., Doughty, D.A. and Gallagher, A., J. Appl. Phys. 68, 4375 (1990)Google Scholar
43. Heintze, M. and Vepřek, S., Appl. Phys. Lett. 54, 1320 (1989)Google Scholar
44. Heintze, M. and Zedlitz, R., J. Non-Cryst. Sol. 198–200, 1038 (1996)Google Scholar
45. Vepřek, S., Ambacher, O., Rieger, W., Schopper, K. and Vepřek-Hejman, M.G.V., Mat. Res. Soc. Symp. Proc. 297, 13 (1993)Google Scholar
46. Howling, A.A., Sansonnens, L., Dorier, J.-D. and Hollenstein, Ch., J. Phys. D: Appl. Phys. 26, 1003 (1993)Google Scholar
47. Hamers, E.A.G., van Sark, W.G.J.H.M., Bezemer, J., van der Weg, W.F. and Goedheer, W.J., in Amorphous Silicon Technology - 1996. ed. by Hack, M., Schiff, E.A., Wagner, S., Matsuda, A., and Schropp, R. (Mat. Res. Soc. Symp. Proc 420, Pittsburgh PA), p. 461 Google Scholar
48. Matsuda, A. and Tanaka, K., Thin Solid Films 92, (1982) 171 Google Scholar
49. Vepřek, S., Sarott, F.-A., Rambert, S., and Taglauer, E., J. Vac. Sci. Technol. A7, 2614 (1989)Google Scholar
50. Vepřek, S. and Heintze, M., Plasma Chem. Plasma Proc. 10, 3 (1991)Google Scholar
51. Keppner, H., Kroll, U., Meier, J. and Shah, S., Solid State Phenom., 44–46, 97 (1995)Google Scholar
52. Tanaka, K. and Matsuda, A., Mater. Sci. Rep. 2, 139 (1987)Google Scholar
53. Perrin, J., J. Non-Cryst. Sol. 137&138, 639 (1991)Google Scholar
54. Tsai, C.C., Knights, J.C., Chang, G. and Wacker, B. J. Appl. Phys. 59, 2998 (1986)Google Scholar
55. Mahan, A.H., Carapella, J., Nelson, B.P., and Crandall, R.S., J. Appl. Phys. 69, 6728 (1991)Google Scholar