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Velocity and Orientation Dependence of Solute Trapping In Si

Published online by Cambridge University Press:  15 February 2011

P. Baeri ,
G. Foti ,
J. M. Poate ,
S. U. Campisano ,
E. Rimini  and
A. G. Cullis
P. Baeri
Affiliation:
Bell Laboratories, Murray Hill, New Jersey7974
G. Foti
Affiliation:
Bell Laboratories, Murray Hill, New Jersey7974
J. M. Poate
Affiliation:
Bell Laboratories, Murray Hill, New Jersey7974
S. U. Campisano
Affiliation:
Istituto di Struttura della Materia dell' Universita, corso Italia, 57-Catania, Italy
E. Rimini
Affiliation:
Istituto di Struttura della Materia dell' Universita, corso Italia, 57-Catania, Italy
A. G. Cullis
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcs WR143PS, England
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Abstract

The segregation phenomena of In, Ga and Bi in Si have been investigated as a function of the liquid-solid interface velocity following laser irradiation. The crystallization velocity has been changed within the range 0.8–5 m/s by varying either the substrate temperature during irradiation or the laser pulse duration. The measured interfacial segregation coefficients depend critically on the velocity and on the crystal orientation of the solidifying plane.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 67
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

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