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Variations of Interfacial Roughness with Epilayer Thickness and Scaling Behavior in Si1−x,Gex, Grown on Si(100) Substrates

Published online by Cambridge University Press:  03 September 2012

Z. H. Ming ,
S. Huang ,
Y. L. Soo ,
Y. H. Kao ,
T. Carns  and
K. L. Wang
Z. H. Ming
Affiliation:
Department of Physics, SUNY at Buffalo, Amherst, NY 14260
S. Huang
Affiliation:
Department of Physics, SUNY at Buffalo, Amherst, NY 14260
Y. L. Soo
Affiliation:
Department of Physics, SUNY at Buffalo, Amherst, NY 14260
Y. H. Kao
Affiliation:
Department of Physics, SUNY at Buffalo, Amherst, NY 14260
T. Carns
Affiliation:
Electrical Engineering Department, UCLA, Los Angeles, CA 90024
K. L. Wang
Affiliation:
Electrical Engineering Department, UCLA, Los Angeles, CA 90024
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Abstract

Roughness parameters of sample surface and buried interfaces in a series of thin layers of Si0.4 GeO.6 grown on Si(100) by molecular beam epitaxy (MBE) were measured by using the technique of grazing-incidence x-ray scattering (GIXS). The strain in the layer and the critical thickness of the film were determined from x-ray diffraction of the Si(004) peak. The roughness parameters can be described by a scaling-law with an exponent β = 0.71 for both the surface and interfacial roughness. Establishment of a scaling law thus allows a possibility of predicting the interfacial roughness as a function of the epilayer thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 367: Symposium P – Fractal Aspects of Materials , 1994 , 311
Copyright
Copyright © Materials Research Society 1995

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