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Variation in the Properties of Superlattices with Band Offsets

Published online by Cambridge University Press:  25 February 2011

T. C. McGill ,
R. H. Miles ,
G. Y. Wu  and
T. J. Watson Sr
T. C. McGill
Affiliation:
Laboratory of Applied Physics California Institute of Technology Pasadena, California 91125
R. H. Miles
Affiliation:
Laboratory of Applied Physics California Institute of Technology Pasadena, California 91125
G. Y. Wu
Affiliation:
Laboratory of Applied Physics California Institute of Technology Pasadena, California 91125
T. J. Watson Sr
Affiliation:
Laboratory of Applied Physics California Institute of Technology Pasadena, California 91125
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Abstract

The implications for recent reports of large valence band offsets the HgTe-CdTe heterojunction are examined. The variation of the band gap and effective mass for transport normal to the layers in the superlattice is examined in detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 143
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

Dornhaus, R. and Nimtz, G., in: “Narrow Band-Gap Semiconductors” Springer- Verlag, Berlin (1983).Google Scholar
2. Schulman, J. N. and McGill, T. C., Appl. Phys. Lett. 34, 663 (1985).Google Scholar
3. Smith, D. L., McGill, T. C. and Schulman, J. N., Appl. Phys. Lett. 43, 180 (1983).Google Scholar
4. Reno, J. and Faurie, J. P., Appl. Phys. Lett. 49, 409 (1986).Google Scholar
5. McGill, T. C., Wu, G. Y., and Hetzler, S. R., J. Vac. Sc. Technol. A 4, 2091 (1986).Google Scholar
6. See for example, the Proceedings of the HgCdTe Workshop October 1986 J. Vac. Sci. Techn July/August 1987.Google Scholar
7. Faurie, J. P., Million, A., and Piaguet, J., Appl. Phys. Lett 41, 713 (1982);J. T. Cheung and T. Magee*J. Vac. Sci. Technol.*A1,1604(1983); P. P. Chow, D. K. Greenlaw, and D. Johnson, J. Vac. Sci. Technol. Al, 562 (1983); K. A. Harris, S. Hwang, D. K. Blanks, J. W. Cook, Jr., J. F. Schetzina, N. Otsuka, J. P. Baukus, and A. T. Hunter, Appl. Phys. Lett. 48, 396 (1986); J. P. Faurie, S. Sivananthan, and J. Reno, *J. Vac. Sci. Technol.*A4,2096(1986).Google Scholar
8. Jones, C. E., Faurie, J. P., Perkowitz, S., Schulman, J. N., and Casselman, T. N., Appl. Phys. Lett. 47, 140 (1985).Google Scholar
9. Baukus, J. P., Hunter, A. T., Marsh, O. J., Jones, C. E., Wu, G. Y., Hetzler, S. R., McGill, T. C., and Faurie, J. P., J. Vac. Sci. Technol. A 4, 2110 (1986).Google Scholar
10. Hetzler, S. R., Baukus, J. P., Hunter, A. T., Faurie, J. P., Chow, P. P., and McGill, T. C., , Appl. Phys. Lett. 47, 260 (1985).Google Scholar
11. McCaldin, J. O., McGill, T. C. and Mead, C. A., Phys. Rev. Lett. 36, 56 (1976).Google Scholar
12. Harrison, W. A., J. Vac. Sci. Technol. 14, 1016 (1977).CrossRefGoogle Scholar
13. Kuech, T. F. and McCaldin, J. O., J. Appl. Phys. 53, 3121 (1981).Google Scholar
14. Guldner, Y., Bastard, G., Vieren, J. P., Voos, M., Faurie, J. P., and Millon, A., Phys. Rev. Lett. 51, 907 (1983).Google Scholar
15. Kowalczyk, Steven P., Cheung, J. T., Kraut, E. A., and Grant, R. W., ,Phys. Rev. Lett. 56, 1605 (1986).Google Scholar
16. J. P. Faurie in Proceedings of the HgCdTe Workshop October 1986; J. Vac. Sci. Technol. July/August 1987(to be published).Google Scholar
17. Shih, C. K., Spicer, W. E., Furdyna, J. K., and Sher, A., in Proceedings of the HgCdTe Workshop October 1986; J. Vac. Sci. Technol. July/August 1987(to be published).Google Scholar
18. Tersoff, J., Phys. Rev. Lett. 56, 2755 (1986).Google Scholar
19. Wu, G. Y. and McGill, T. C., J. Appl. Phys. 58, 3914 (1985).Google Scholar
20. Bastard, G., Phys. Rev. B 25, 7584 (1982).Google Scholar
21. Chu, J., Xu, S., and Tang, D., Appl. Phys. Lett. 43, 1064 (1983).Google Scholar
22. Guldner, Y., Bastard, G., and Voos, M., J. Appl. Phys. 57, 1403 (1985).Google Scholar
23. Baukus, J.P., Hunter, A. T., Schulman, J. N., and Faurie, J. P., J. Vac. Sci. Technol. July/August 1987 (to be published).Google Scholar