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Variable Angle Spectroscopic Ellipsometry Studies of HgI2

Published online by Cambridge University Press:  21 February 2011

Huade Yao  and
Blaine Johs
Huade Yao
Affiliation:
University of Nebraska, Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, Lincoln, NE 68588
Blaine Johs
Affiliation:
J.A. Woollam Co., Lincoln, NE 68502
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Abstract

Variable angle spectroscopic ellipsometry (VASE) measurements were employed to study the optical properties of HgI2. The bulk crystal HgI2 surface was subjected to a 10% KI etching prior to the VASE measurements. SE measurements were performed at room temperature, in air with several different angles of incidence. The uniaxial anisotropic nature of the HgI2 crystal was treated in the VASE analysis. Anisotropic dielectric functions of single crystal HgI2, ε||(wo) and ε⊥(ω), for optical electric field vector oriented parallel and perpendicular to the c axis, respectively, were obtained in the range of ∼2.0 - 5.0 eV. Surface aging effects of the HgI2 crystal, after the 10% KI etching, were characterized by VASE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 341
Copyright
Copyright © Materials Research Society 1993

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References

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