Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-29T07:28:10.419Z Has data issue: false hasContentIssue false
  • English
  • Français

Variable Angle of Incidence Spectroscopic Ellipsometric Study of Semiconductor Multilayer Structures

Published online by Cambridge University Press:  25 February 2011

Paul G. Snyder ,
John A. Woollam  and
Samuel A. Alterovitz
Paul G. Snyder
Affiliation:
University of Nebraska-Lincoln, Lincoln, NE 68588-0511
John A. Woollam
Affiliation:
University of Nebraska-Lincoln, Lincoln, NE 68588-0511
Samuel A. Alterovitz
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
Get access

Abstract

The sensitivity of spectroscopic ellipsometry data to multilayer model parameters is shown to be a strong function of the angle of incidence. A quantitative study for a GaAs-AlxGa1-xAs-GaAs structure shows that maximum sensitivity to layer thicknesses and ternary composition occurs near the wavelength-dependent principal angle. These results are verified by experimental measurements on two MBE-grown samples. Moderately high doping levels in the ternary layers are also found to strongly affect the data at photon energies below the ternary bandgap. Null ellipsometry measurements at only two wavelengths are sufficient to determine layer thicknesses.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 245
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Erman, M., Theeten, J.B., Vodjdani, N. and Demay, Y., J. Vac. Sci. Technol. B1, 328 (1983).CrossRefGoogle Scholar
2. Azzam, R.M.A. and Bashara, N.M., Ellipsometry and Polarized Light (North Holland Publishing Co., New York, 1977.Google Scholar
3. Alterovitz, S.A., Bu-Abbud, G.H. and Woollam, J.A., J. Appl. Phys. 54, 1559 (1983).CrossRefGoogle Scholar
4. Snyder, P.G., Rost, M.C., Bu-Abbud, G.H., Woollam, J.A. and Alterovitz, S.A., to be published.Google Scholar
5. Aspnes, D.E. and Studna, A.A., Phys. Rev. B27, 985 (1983).CrossRefGoogle Scholar
6. Aspnes, D.E., Kelso, S.M., Logan, R.A., Bhat, R., J. Appl. Phys. accepted.Google Scholar
7. Aspnes, D.E., Schwartz, G.P., Gualtieri, G.J., Studna, A.A. and Schwartz, B., J. Electrochem. Soc. 128, 590 (1981).CrossRefGoogle Scholar
8. See, for example, Aspnes, D.E., Handbook on Semiconductors, Vol.2, edited by Balkansky, M. (North Holland Publishing Co., New York, 1980), p. 109.Google Scholar