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Variable Angle of Incidence Spectroscopic Ellipsometric Measurement of the Franz-Keloysh Effect in Modfet Structures†

Published online by Cambridge University Press:  26 February 2011

P. G. Snyder ,
J. E. Oh  and
J. A. Woollam
P. G. Snyder
Affiliation:
University of Nebraska, Lincoln, NE 68588–0511
J. E. Oh
Affiliation:
University of Nebraska, Lincoln, NE 68588–0511
J. A. Woollam
Affiliation:
University of Nebraska, Lincoln, NE 68588–0511
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Abstract

It has been shown recently that variable angle of incidence spectroscopie ellipsometry (VASE) is a sensitive technique for determining semiconductor multilayer model parameters, e.g. layer thicknesses and ternary compositions. In this paper we show that VASE is, in addition, sensitive to the Franz-Keldysh effect induced by band bending in the barrier layer of a GaAs-AlGaAs-GaAs (MODFET) structure. VASE measurements differ from electro-reflectance and photoreflectance, in that the internal heterojunction region electric field is directly probed, without the application of a modulating field. The Franz-Keldysh effect appears in the VASE spectra near the AlGaAs bandgap energy. Data for two samples, with different doping profiles, are quantitatively modeled to determine the internal electric field amplitudes.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 761
Copyright
Copyright © Materials Research Society 1987

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Footnotes

†

Supported by NASA Lewis Grant NAG-3–154.

References

REFERENCES

[1] See, for example, Aspnes, D.E., Handbook on Semiconductors, edited by Balkansky, M. (North-Holland, New York, 1980), Vol. 2, p. 109.Google Scholar
[2] Glembocki, O.J., Shanabrook, B.V., Bottka, N., Beard, W.T. and Comas, J., Appl. Phys. Lett. 46, 970 (1985).Google Scholar
[3] Snyder, P.G., Woollam, J.A., and Alterovitz, S.A., Mat. Res. Soc. Symp. Proc. 69, 245 (1986).Google Scholar
[4] Snyder, P.G., Rost, M.C., Bu-Abbud, G.H., Woollam, J.A. and Alterovitz, S.A., J. Appl. Phys. 60, 3293 (1986).CrossRefGoogle Scholar
[5] Adachi, S., J. Appl. Phys. 58, Rl (1985).CrossRefGoogle Scholar