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Vapor Phase Synthesis and Characterization of Gallium Nitride Powders

Published online by Cambridge University Press:  17 March 2011

Kazuhiko Hara ,
Yoshinori Matsuo  and
Yuuki Matsuno
Kazuhiko Hara
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology 4259 Nagatsuda-cho, Midori-ku, Yokohama 226-8503, Japan
Yoshinori Matsuo
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology 4259 Nagatsuda-cho, Midori-ku, Yokohama 226-8503, Japan
Yuuki Matsuno
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology 4259 Nagatsuda-cho, Midori-ku, Yokohama 226-8503, Japan
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Abstract

GaN crystalline powders have been synthesized by the reaction of a Ga vapor with an ammonia gas at the reaction temperature Tr = 900 - 1100°C in an atmospheric-pressure open-tube reactor. The size of GaN particles ranges from 0.2 to 2νm. It was found that the structural and luminescent properties depend strongly on Tr. The mean size of the GaN particles increased as Tr is raised. The GaN powders exhibited photoluminescence (PL) dominated by the band edge emissions. Thermal quenching is relatively significant for the powders synthesized at lower Tr. This is presumably due to enhanced non-radiative recombination at the surface because of their smaller particle size.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.31
Copyright
Copyright © Materials Research Society 2001

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References

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