Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T02:31:29.337Z Has data issue: false hasContentIssue false
  • English
  • Français

Vacancy Injection Enhanced Al-Ga Inter-diffusion in Si FIB Implanted Superlattice

Published online by Cambridge University Press:  22 February 2011

P. Chen  and
A.J. Steckl
P. Chen
Affiliation:
Nanoelectronics LaboratoryUniversity of Cincinnati, Cincinnati, OH 45221–0030
A.J. Steckl
Affiliation:
Nanoelectronics LaboratoryUniversity of Cincinnati, Cincinnati, OH 45221–0030
Get access

Abstract

The Al-Ga inter-diffusion induced by Si FIB implantation and subsequent RTA were investigated in an Al0.3Ga0.7As/GaAs superlattice with equal 3.5 nm barrier and well widths. Si++ was accelerated to 50 kV as well as 100kV and implanted parallel to sample normal at doses ranging from 1013 to 1015/cm2. The effect of rapid thermal anneal of 10s at 950°C was characterized by SIMS technique. In the implanted region, the inter-diffusion as well as compositional mixing were significantly enhanced. An ion dose as low as 1×1014/cm2 results in a two-order of magnitude increase in the inter-diffusion coefficient, to a value of 4.5×10-14 cm2/sec, in contrast to 1.3×10-16 cm2/sec from RTA-only. This produces a mixing parameter of σ90%. A strong depth dependence of the mixing process was observed at implantation energy of 100keV with a pinch-off region being formed at certain depth. It is noticed that the depth where this enhancement occurred is not associated with either the maximum concentration of Si ions or of vacancies. Instead, it represents the positive maximum of the second derivative of the vacancy profile, which in turn represents the vacancy injection generated by presence of a transient vacancy concentration gradient. Based on this, a theoretical model was developed using vacancy injection as responsible for mixing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 37
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Steckl, A., Chen, P., Choo, A., H.Jackson, Boyd, J., Pronko, P., Ezis, A. and Kolbas, R., Mat. Res. Soc. Symp. Proc. 240B, 703(1992).Google Scholar
[2] Kobayashi, J., Nakajima, M., Bamba, Y., Fukunaga, T., Matsui, K., Ishida, K., Nakashima, H. and Ishida, Koichi, Jpn J. Appl. Phys. 25, L385(1986).CrossRefGoogle Scholar
[3] Matsui, K., Kobayashi, J., Fukunaga, T., Ishida, Koichi and Nakashima, H., Jpn J. Appl. Phys. 25, 651(1986).CrossRefGoogle Scholar
[4] Lee, S., Braunstein, G., Fellinger, P., Kahen, K.B. and Rajeswaran, G., Appl. Phys. Lett. 53, 2531(1988)CrossRefGoogle Scholar
[5] Ishida, K., Miyauchi, E., Morita, T., Takamori, T., Fukunaga, T., Hashimoto, H., Jpn. J. Appl. Phys. 26, 285(1987).CrossRefGoogle Scholar
[6] Tsang, W., Choa, F., Wu, M., Chen, Y., Logan, R., Chu, S., Sergent, A., and Burrus, C. Appl. Phys. Lett. 60, 2580(1992).CrossRefGoogle Scholar
[7] Tan, T., Gosele, U. and Yu, S., Critical Reviews in Solid State and Materials Sciences 17, 47(1991).CrossRefGoogle Scholar
[8] Steckl, A., Chen, P., Choo, A., Jackson, H., Boyd, J., Ezis, A., Pronko, P., Novak, S. and Kolbas, R., Mat. Res. Soc. Symp. Proc. 281, 319 (1993)Google Scholar
[9]. Lee, S., Braunstein, G., Fellinger, P., Kahen, K. and Rajeswaran, G., Appl. Phys. Lett. 53, 2531(1988).CrossRefGoogle Scholar
[10]. Kahen, K., Rajeswaran, G. and Lee, S., Appl. Phys. Lett. 53, 1635(1988)CrossRefGoogle Scholar
[11]. Kahen, K. and Rajeswaran, G., J. Appl. Phys. 66, 545(1989).CrossRefGoogle Scholar
[12]. Schwarz, S., Venkatesan, T., Bhat, R., Koza, M., Yoon, H., Arakawa, Y. and Mei, P., Mat. Res. Soc. Symp. Proc. 56, 321(1986).CrossRefGoogle Scholar
[13] Parker, N., Robinson, W. and Snyder, J., SPIE 632, 76(1986).Google Scholar
[14] Ziegler, J., Biersack, J. and Littmark, U., “The stopping and range of ions in solids”, Pergamon Press (1985).Google Scholar