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Vacancy Diffusion at Polysilicon Encapsulated GaAs Surfaces

Published online by Cambridge University Press:  26 February 2011

K. L. Kavanagh ,
C. W. Magee  and
J. Sheets
K. L. Kavanagh
Affiliation:
Dept. Materials Science, Cornell University, Ithaca, NY 14853
C. W. Magee
Affiliation:
RCA, David Sarnoff Laboratories, Princeton, NJ 08540
J. Sheets
Affiliation:
Adv. Semiconductor Materials, 3005 48th St. Tempe, AR 85282
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Abstract

The diffusivity of Si and P in GaAs encapsulated with heavily-doped polysilicon (poly-Si) is correlated to the flux of Ga and As diffusing from the substrate into the encapsulant. A model based on the diffusion of vacancies into the GaAs is proposed and used to simulate the data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 463
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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