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Vacancies In Electron Irradiated 6H-SiC

Published online by Cambridge University Press:  15 February 2011

T. Friessnegg  and
S. Dannefaer
T. Friessnegg
Affiliation:
Institut für Kernphysik, Technische Universität Graz, A-8010 Graz, Austria
S. Dannefaer
Affiliation:
Department of Physics, University of Winnipeg, Winnipeg, MB R3B 2E9, Canada
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Abstract

Annealing of electron irradiated bulk n-type 6H-SiC has shown that neutral carbon vacancies and neutral silicon vacancies undergo a major reduction in concentration in the 20–200 °C temperature interval after which only slight changes occur up to 1200 °C. The experiments suggest that the positively charged carbon vacancy, detected by electron paramagnetic resonance, constitutes only a small fraction of all carbon vacancies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 625
Copyright
Copyright © Materials Research Society 1997

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