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UV photoconductors based on Ga-doped ZnO films

Published online by Cambridge University Press:  01 February 2011

Leelaprasanna J. Mandalapu ,
Faxian Xiu ,
Zheng Yang  and
Jianlin Liu
Leelaprasanna J. Mandalapu
Affiliation:
[email protected], University of California at Riverside, Department of Electrical Engineering, B144 Dept of Elec. Engg., Univ. of CA at Riverside, Riverside, CA, 92521, United States
Faxian Xiu
Affiliation:
[email protected], University of California at Riverside, Department of Electrical Engineering, United States
Zheng Yang
Affiliation:
[email protected], University of California at Riverside, Department of Electrical Engineering, United States
Jianlin Liu
Affiliation:
[email protected], University of California at Riverside, Department of Electrical Engineering, United States
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Abstract

Ga-doped n-type ZnO films were grown by molecular-beam epitaxy (MBE) on R-plane sapphire substrates. Material characterizations such as photoluminescence (PL), X-ray diffraction (XRD), secondary ion mass spectroscopy (SIMS) and Hall measurements were carried out to characterize the optical, structural, and electrical properties of the film. Photoconductor devices for ultraviolet (UV) light detection were fabricated by depositing Al (250 nm)/Ti (20 nm) ohmic metal contacts. Linear characteristics were obtained from current-voltage (I-V) measurements that showed response to UV and visible illumination. Voltage dependent photocurrent (PC) spectra and responsivity spectrum were obtained to characterize the detection capability of the device in the UV region.

Keywords

II-VIoptoelectronicmolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE08-07
Copyright
Copyright © Materials Research Society 2006

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References

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