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UV Laser-Initiated Formation of Si3N4*

Published online by Cambridge University Press:  15 February 2011

T. F. Deutsch ,
D. J. Silversmith  and
R. W. Mountain
T. F. Deutsch
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
D. J. Silversmith
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
R. W. Mountain
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
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Abstract

Si3N4 films have been deposited on Si by using 193 nm ArF excimer laser radiation to initiate the reaction of SiH4 and NH3 at substrate temperatures between 200–600°C. Stoichiometric films having physical and optical properties comparable to those produced using low-pressure chemical vapor deposition (LPCVD) have been produced. The dielectric properties of the films are at present inferior to those of LPCVD material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 129
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

This work was sponsored by the Department of the Air Force, in part under a specific program sponsored by the Air Force Office of Scientific Research, by the Defense Advanced Research Projects Agency, and by the Army Research Office.

References

REFERENCES

1. Kim, H. M., Tai, S. S., Groves, S. L., and Schuegraf, K. L., in Proceedings of the Eighth International Conference on Chemical Vapor Deposition, (Electrochemical Society, Pennington, New Jersey, 1981), Vol. 81–7 p. 258.Google Scholar
2. Peters, J. W., in Technical Digest of the International Electron Devices Meeting 1981, (Institute of Electrical and Electronics Engineers, New York, New York, 1981), p. 240.Google Scholar
3. Boyer, P. K., Roche, G. A., Ritchie, W. H., and Collins, G. J., Appl. Phys. Lett. 40, 716 (1982).Google Scholar
4. Roche, G. A., Boyer, P. K., and Collins, G. J., Technical Digest of the Conference on Laser and Electro-Optics, CLEO '82, (Optical Society of America, Washington, D.C., 1982), p. 20, paper WE–2.Google Scholar
5. Andreatta, R. W., Abele, C. C., Osmundsen, J. F., Eden, J. G., Lubben, D., and Greene, J. E., Appl. Phys. Lett. 40, 183 (1982).Google Scholar
6. Donnelly, V. M., Baronauski, A. P., and McDonald, J. R., Chem. Phys. 43, 271 (1979).CrossRefGoogle Scholar
7. Chow, R., Lanford, W. A., Ke–Ming, W., and Rosler, R. S., J. Appl. Phys. 53, 5630 (1982).Google Scholar
8. Wong, J., J. Electron. Mater. 5, 113 (1975).Google Scholar
9. Pliskin, W. A., J. Vac. Sci. Technol. 14, 1064 (1977).Google Scholar
10. Grey, P. V., Proc. IEEE 57, 1543 (1969).Google Scholar
11. Nicollian, E. H. and Brews, J. R., MOS (Metal Oxide Semiconductor) Physics and Technology (John Wiley & Sons, New York, 1982).Google Scholar