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Using Hyperfine Interaction for the Structural Characterization of Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

Martin Stutzmann  and
David K. Biegelsen
Martin Stutzmann
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, Federal Republic of Germany
David K. Biegelsen
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

The hyperfine interaction between electronic and nuclear spins in hydrogenated amorphous silicon has been observed for the various paramagnetic defects in this material by electron spin resonance (ESR) and electron nuclear double resonance (ENDOR). The large hyperfine interaction between dangling bonds and 29Si as well as between donor electrons and 31p or 75 As nuclei can be resolved in ESR and provides direct information about the structure of the underlying electronic states. The smaller dipolar coupling of all paramagnetic states to more distant nuclei leads to an ENDOR response near the free nuclear resonance frequencies, which can be used to study the coupling of the electronic and nuclear spin system to the lattice phonons and to each other.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 397
Copyright
Copyright © Materials Research Society 1986

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References

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