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Use of Valved, Solid Group V Sources for the Growth of GaAs/GaInP Heterostructures by Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

F. G. Johnson ,
G. W. Wicks ,
R. E. Viturro  and
R. Laforce
F. G. Johnson
Affiliation:
The Institute of Optics, University of Rochester, Rochester, NY 14627
G. W. Wicks
Affiliation:
The Institute of Optics, University of Rochester, Rochester, NY 14627
R. E. Viturro
Affiliation:
Xerox Webster Research Center 114–41D, Webster, NY 14580
R. Laforce
Affiliation:
Xerox Webster Research Center 114–41D, Webster, NY 14580
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Abstract

We report on the first growth of GaAs/Ga0.5In0.5P heterostructures by conventional molecular beam epitaxy using solid-source valved crackers to supply both the arsenic and the phosphorus fluxes. By regulating the group V fluxes with the cracker needle valves, arsenide-phosphide heterostructures were successfully grown with virtually no group V intermixing between layers. For comparison, similar heterostructure samples were grown using only the mechanical shutters to switch between group V fluxes, and the resulting layers were severely intermixed. The amount of group V intermixing was shown to be independent of whether As2 or As4 fluxes were used to grow the layers. A GaAs/Ga0.5In0.5P multiple quantum well sample was also grown using the valved crackers. Photoluminescence peaks were clearly observed from 40 Å, 80 Å, and 300 Å GaAs quantum wells, but no luminescence was detected from a 20 Å well. An 80Å GaAs/ 80Å Ga0.5In0.5P superlattice was grown, and superlattice satellite peaks were observed in the X-ray rocking curves. The appearance of misfit dislocations suggests localized intermixing at the interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 49
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Razeghi, M., Maurel, P., Omnes, F., Ben Armor, S., Dmowski, L., and Portal, J.C., Appl. Phys. Lett. 48, 1267 (1986).Google Scholar
2. He, Xiaoguang and Razeghi, Manijeh, Appl. Phys. Lett. 61, 1703 (1992).Google Scholar
3. Lee, H.Y., Hafich, M.J., and Robinson, G.Y., J. Cryst. Growth 105, 244 (1990).Google Scholar
4. Foxon, C.T., Joyce, B.A., Norris, M.T., J. Cryst. Growth 49, 132 (1980).Google Scholar
5. Arthur, J.R. and LePore, J.J., J. Vac. Sci. Technol. 6, 545 (1969).Google Scholar
6. Huet, D., Lambert, M., Bonnevie, D., and Dufresne, D., J. Vac. Sci. Technol. B 3, 823 (1985).Google Scholar
7. Miller, D.L., Bose, S.S., and Sullivan, G.J., J. Vac. Sci. Technol. B 8, 311 (1990).Google Scholar
8. Wicks, G.W., Koch, M.W., Varriano, J.A., Johnson, F.G., Wie, C.R., Kim, H.M., and Colombo, P., Appl. Phys. Lett. 59, 342 (1991).Google Scholar
9. Varriano, J.A., Koch, M.W., Johnson, F.G., and Wicks, G.W., J. Electron. Mater. 21, 195 (1992).Google Scholar
10. Wood, C.E.C., Desimone, D., Singer, K., and Wicks, G.W., J. Appl. Phys. 53, 4230 (1982).Google Scholar
11. Hou, H.Q., Liang, B.W., Ho, M.C., Chin, T.P., and Tu, C.W., J. Vac. Sci. Technol. B 10, 953 (1992).Google Scholar
12. Chow, R. and Fernandez, R., Mater. Res. Soc. Symp. Proc. 145, 13 (1989).Google Scholar
13. Wood, C.E.C., Stanley, C.R., Wicks, G.W., and Esi, M.B., J. Appl. Phys. 54, 1868 (1983).Google Scholar
14. Nagao, S., Takashima, M., Inoue, Y., Katoh, M., and Gotoh, H., J. Cryst. Growth 111, 521 (1991).Google Scholar
15. Garcia, J.C., Maurel, P., Bove, P., and Hirtz, J.P., Jpn. J. Appl. Phys. 30, 1186 (1991).Google Scholar
16. Herman, M.A., Bimburg, D., and Christen, J., J. Appl. Phys. 70, Rl (1991).Google Scholar
17. Welch, D.F., Wicks, G.W., and Eastman, L.F., Appl. Phys. Lett. 46, 991 (1985).Google Scholar