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The Use of Tertiarybutylphosphine and Tertiarybutylarsine for the Metalorganic Molecular Beam Epitaxial Growth of Resonant Tunneung Devices

Published online by Cambridge University Press:  26 February 2011

E. A. Beam III  and
A. C. Seabaugh
E. A. Beam III
Affiliation:
Texas Instalments Incorporated, Central Research Laboratories, M/S 147, Dallas, TX 75265, USA
A. C. Seabaugh
Affiliation:
Texas Instalments Incorporated, Central Research Laboratories, M/S 147, Dallas, TX 75265, USA
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Abstract

We report on the use of thermally-cracked tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBA) with elemental Ga, In, and Al sources for the MOMBE growth of InP-based resonant tunneling diode (RTD) and resonant tunneling bipolar transistor (RTBT) structures. We have systematically examined the effects of growth conditions and heterostructure modifications on the InP/lnGaAs RTD including the use of pseudomorphic (InGa)P barriers and, in addition, explored for the first time, InP quantum well RTDs using both AlAs and InGaP barriers. Cross-sectional transmission electron microscopy has been used to correlate the structural quality with the electrical characteristics for both lattice-matched and pseudomorphic layers composed of InAs, AlAs, and InGaP. We also demonstrate the first use of mixed InP/lnGaAs and AlAs/lnGaAs heterojunctions in the RTBT. These transistors exhibit room temperature negative transconductance and a peak-to-valley current ratio of 35, the highest yet observed In the RTBT.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 33
Copyright
Copyright © Materials Research Society 1992

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References

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