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A Use of Specimens in Form of Tips for In-Situ Experiments in Electron Microscopes (Preparations, Preliminary Results)

Published online by Cambridge University Press:  16 February 2011

M. Drechsler
M. Drechsler*
Affiliation:
CRMC2-CNRS, Campus Luminy, 13288 Marseille Cedex 9, France in collaboration with F. BEL, S. RAMDANI, A. MAAS (Bonn, FRG) and A. CLAVERIE (Toulouse)
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Abstract

A long term aim of this study is to overcome the difficulties to use electron microscopes (TEM, SEM) for in situ experiments, which includes (1) a preparation of initially clean surfaces, (2) a use of specimen micro-chambers, (3) in situ heating, (4) devices to produce and analyse reactions and (5) video registration. An interesting step in this direction is the replacement of the usual thin films by specimens in form of tips similar to those used in field emission devices. A tip is first prepared by electrolytic etching. Then the tip is cleaned and shaped in vacuum. This opens the possibility to visualize and measure kinetic phenomena up to higher temperatures than so far (1500 K and more). Examples of results are: (1) Surface matter fluxes and surface self-diffusion can be measured, (2) solid/solid interfaces and their displacements (reactions) can be measured, (3) grain boundary displacements and grain rotations can be measured and (4) periodic electric discharges between electrodes of 0.1 gim on specimens are prepared, visualized and explained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 199: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials II , 1990 , 103
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1] Müller, E.W. and Tsong, T.T.: Field Ion Microscopy, Amer. Elsevier P.C., New York 1969.Google Scholar
[2] Miller, M.K. and Smith, G.D.W.: Atom Probe Micro Analysis, Materials Research Society, Pittsburgh, PA 15237, 1989.Google Scholar
[3] Haefer, R., Z. Physik 116 (1940) 604.Google Scholar
[4] Binh, Vu Thien, Piquet, A., Uzan, R., Drechsler, M., Revue Physique Appl. 5 (1970) 645.Google Scholar
[5] Maas, A., Rhein. Westf. Akad. d. Wissenschaften. V. 301, Westdeutscher Verlag 1981, p. 51–124.Google Scholar
[6] Locatelli, D., Martinez, J.P., Balladore, J.L., Jouffrey, B., 6th Intern. Conf. on HVEM; Anvers, 4; 64, 1980.Google Scholar
[7] Balladore, J.L., Lapeyre, D., Martinez, J.P., Trinquier, J., Jouffrey, B., J. Microsc. Spectrosc. Electron. Vol.7 (1982) 575.Google Scholar
[8] Wynblatt, P. and Drechsler, M., Surface Sci. 221 (1989) L774.Google Scholar
[9] Binh, Vu Thien, Maas, A., Surface Sci. 189/190 (1987) 1076.Google Scholar
[10] Mc Neil, W.D. and Sheperd, W.P., Rev. Scient. Instr. 43 (1972) 1136.Google Scholar
[11] Schmidt, W.A. and Naschitzki, M., Surface Sci. 206 (1988) 244.Google Scholar
[12] Drechsler, M. and Prulhiere, J.P., Vacuum 20 (1970) 491.Google Scholar
[13] Souchière, J.L. and Binh, Vu Thien, Surface Sci. 168 (1986) 52; and Thesis J.L. Souchière, Université de Lyon I, France, 1986.Google Scholar
[14] Binh, Vu Thien, Piquet, A., Roux, H., Uzan, R., Drechsler, M., Surface Sci. 25 (1971) 348.Google Scholar
[15] Nichols, F.A. and Mullins, W.W., J. Appl. Physics 36 (1965) 1826.Google Scholar
[16] Drechsler, M., Jap. Journ. Appl. Physics, Suppl. 2, Pt. 2 (1974) 25.Google Scholar
[17] Binh, Vu Thien, Piquet, A., Roux, H., Uzan, R., Drechsler, M., Journal de Physique Lettres 35 (1974) L91.Google Scholar
[18] Binh, Vu Thien, Uzan, R., Drechsler, M., Surface Sci. 57 (1976) 118.Google Scholar
[19] Roux, H., Piquet, A., Uzan, R., Drechsler, M., Surface Sci. 59 (1976) 97.Google Scholar
[20] Roux, H., Piquet, A., Pralong, G., Uzan, R., Drechsler, M., Surface Sci. 71 (1978) 375.Google Scholar
[21] Binh, Vu Thien, Uzan, R., Drechsler, M., Journal de Physique Lettres 39 (1978) 385.Google Scholar
[22] Hok, S. and Drechsler, M., Surface Sci. 107 (1981) L362.Google Scholar
[23] Binh, Vu Thien, Chaudier, M., Couturier, J.C., Uzan, R., Drechsler, M., Surface Sci. 57 (1976) 184.Google Scholar
[24] Drechsler, M. and Bermond, J.M., Surface Sci. 178 (1986) 496.Google Scholar
[25] Drechsler, M., Ramdani, S., Maas, A., Surface Sci. 189/190 (1987) 1076.Google Scholar
[26] Norden, H., Andren, H.O. et al., Proc. Intern. Field Emission Symposia: 27th (1980) p. 209; 29th (1982) p. 505; 31st (1984) p. 349 and 391; 32nd (1985) p. 191; 33rd (1986) p. 251; 35th (1988) p. 341 and 36th (1989) p. 303.Google Scholar
[27] Binh, Vu Thien, Uzan, R., Drechsler, M., Surface Sci. 60 (1976) 13.Google Scholar
[28] Barsotti, T., Bermond, J.M., Drechsler, M., Surface Sci. 146 (1984) 467.Google Scholar
[29] Drechsler, M., Claverie, A., Chazelas, J., accepted by “Vacuum” 1990.Google Scholar