Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-25T17:46:57.775Z Has data issue: false hasContentIssue false

Use of Quantum-Well Superlattices to Obtain a High Figure of Merit from Nonconventional Thermoelectric Materials

Published online by Cambridge University Press:  21 February 2011

L. D. Hicks
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
M. S. Dresselhaus
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
Get access

Abstract

Currently, the materials with the highest thermoelectric figure of merit (ZT) are one-band materials. The presence of both electrons and holes lowers ZT, so two-band materials such as semimetals are not useful thermoelectric materials. However, by preparing these materials in the form of two-dimensional quantum-well superlattices, it is possible to separate the two bands and transform the material to an effectively one-carrier system. We have investigated theoretically the effect of such an approach and our results indicate that a significant increase in ZT may be achieved. We have also evaluated the possibility of using intercalation as a means to achieve an increase in ZT. Our results allow the possibility of using new types of materials as thermoelectric refrigeration elements.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Goldsmid, H. J., Thermoelectric Refrigeration (Plenum, New York, 1964).Google Scholar
2 Goldsmid, H. J., Electronic Refrigeration (Pion, London, 1986), p. 2.Google Scholar
3 Hicks, L. D. and Dresselhaus, M. S., Phys. Rev. B 47, 12727 (1993).Google Scholar
4 Schulman, J. N. and McGill, T. C., in Synthetic Modulated Structures, edited by Chang, L. L. and Giessen, B. C. (Academic, Orlando, 1985), pp. 9698.Google Scholar
5 Berroir, J. M., Guldner, Y., Vieren, J. P., Voos, M., and Faurie, J. P., Phys. Rev. B 34, 891 (1986).Google Scholar
6 Gallo, C. F., Chandrasekhar, B. S., and Sutter, P. H., J. Appl. Phys. 34, 144 (1963).Google Scholar
7 Ashcroft, N. W. and Mermin, N. D., Solid State Physics (Saunders College, Philadelphia, 1976), Chap. 13.Google Scholar
8 Schiferl, D. and Barrett, C. S., J. Appl. Crystallogr. 2, 30 (1969).Google Scholar
9 Dresselhaus, M. S., in Proc. Conf. Phys. Semimetals and Narrow-Gap Semiconductors, Dallas 1970, edited by Carter, D. L. and Bate, R. T. (Pergamon, Oxford, 1971), pp. 1617.Google Scholar
10 Isaacson, R. T. and Williams, G. A., Phys. Rev. 185, 682 (1969).Google Scholar
11 Saunders, G. A. and Sümengen, Z., Proc. Roy. Soc. London A329, 453 (1972).Google Scholar
12 Partin, D. L., Heremans, J., Morelli, D. T., Thrush, C. M., Olk, C. H., and Perry, T. A., Phys. Rev. B 38, 3818 (1988).Google Scholar
13 Shin, S. C., Hilliard, J. E., and Ketterson, J. B., Thin Solid Films 111, 323 (1984).Google Scholar
14 Brandt, N. B., Chudinov, S. M., and Karavaev, V. G., Sov. Phys. JETP 34, 368 (1972).Google Scholar
15 Dresselhaus, M. S. and Dresselhaus, G., Adv. Phys. 30, 139 (1981).Google Scholar
16 Kulbachinskii, V. A., Kovalyuk, Z. D., and Pyrlya, M. N., Phys. Stat. Sol. (b) 169, 157 (1992).Google Scholar