Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T17:39:54.841Z Has data issue: false hasContentIssue false
  • English
  • Français

Use of Low Temperature Si MBE Growth Techniques for High Performance SiGe/Si Electronics

Published online by Cambridge University Press:  25 February 2011

E. T. Croke ,
M. J. Harrell ,
M. E. Mierzwinski  and
J. D. Plummer
E. T. Croke
Affiliation:
Hughes Research Laboratories, SOU Malibu Canyon Rd., Malibu, CA 90265.
M. J. Harrell
Affiliation:
Hughes Research Laboratories, SOU Malibu Canyon Rd., Malibu, CA 90265.
M. E. Mierzwinski
Affiliation:
Stanford University, Center for Integrated Systems, Stanford, CA 94305.
J. D. Plummer
Affiliation:
Stanford University, Center for Integrated Systems, Stanford, CA 94305.
Get access

Abstract

Through the use of low temperature Si molecular beam epitaxy (MBE), we have fabricated high performance Si1−x Gex/Si heterojunction bipolar transistors (HBTs) and bipolar inversion-channel field effect transistors (BICFETs). Our growth method employs a high temperature Si-assisted desorption followed by MBE growth at a temperature only slightly in excess of the critical temperature for two-dimensional layer-by-layer growth. [1] At this temperature, segregation of Sb has previously been shown to be kinetically limited. [2] In addition, significantly more strain can be frozen into such an epitaxial layer as compared with those grown at higher temperatures.[3] Secondary ion mass spectroscopy (SIMS) data verify the abruptness of the Sb doping profiles in our device structures. High resolution x-ray diffraction (HRXRD) data are consistent with planar, coherently strained Si1−x Gex layers in our HBTs. A gain of 2690 (3210) is observed in our BICFETs at 300 K (7 K).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 415
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Jorke, H., Kibbel, H., Schäffler, F., and Herzog, H.-J., Thin Solid Films 183, 307 (1989).Google Scholar
[2] Jorke, H., Surf. Sci. 193, 569 (1988).Google Scholar
[3] Hauenstein, R. J. et al., J. Vac. Sci. Technol. B 7, 767 (1989).Google Scholar
[4] Huang, C. F. et al., in Proc. of the 2nd Int. Symp. on Si MBE, ed. by Bean, J. C. and Schowalter, L. J. (The Electrochemical Society, Pennington, 1988), p. 501.Google Scholar
[5] Streit, D. C. and Allen, F. G., J. Appl. Phys. 61, 2894 (1987).Google Scholar
[6] Jenkins, M. W., J. Electrochem. Soc. 124, 757 (1977).Google Scholar
[7] Speriosu, J. S. and Vreeland, T., J. Appl. Phys. 56, 1591 (1984).Google Scholar
[8] Patton, G. L. et al., IEEE Elect. Dev. Lett. 11, 171 (1990).Google Scholar
[9] Gruhle, A. et al., IEEE Elect. Dev. Lett. 13, 206 (1992).Google Scholar
[10] James, R. W., Solid State Physics 15, 169 (1963).Google Scholar
[11] Sze, S. M., Physics of Semiconductor Devices, Second Edition (John Wiley and Sons, New York, 1981), pp. 566–636.Google Scholar
[12] Iyer, S. S., Kubiak, R. A. A., and Parker, E. H. C., in Silicon Molecular Beam Epitaxy, Vol. I, ed. by Kasper, E. and Bean, J. C. (CRC Press, Boca Raton, 1988), pp. 31–64.Google Scholar
[13] Taylor, G. W. and Simmons, J. G., IEEE Trans. Elect. Dev. ED–32, 2368 (1985).Google Scholar
[14] Taft, R. C., Plummer, J. D., and Iyer, S. S., IEDM Tech. Dig., 655 (1989).Google Scholar
[15] Mierzwinski, M. E. et al., to be presented at the IEEE Int. Elect. Dev. Meeting, San Francisco, CA, December 13–16, 1992.Google Scholar