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The Use of Leed for the Characterization of Surface Damage from Pulsed Laser Irradiation

Published online by Cambridge University Press:  22 February 2011

Aubrey L. Helms Jr. ,
Chin-Chen Cho ,
Steven L. Bernasek  and
Clifton W. Draper
Aubrey L. Helms Jr.
Affiliation:
Department of Chemistry, Frick Chemical Laboratory, Frinceton University, Princeton N.J. 08544
Chin-Chen Cho
Affiliation:
Department of Chemistry, Frick Chemical Laboratory, Frinceton University, Princeton N.J. 08544
Steven L. Bernasek
Affiliation:
Department of Chemistry, Frick Chemical Laboratory, Frinceton University, Princeton N.J. 08544
Clifton W. Draper
Affiliation:
AT & T Technologies Engineering Research Center, P.O. Box 900, Princeton N.J. 08540
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Abstract

Low Energy Electron Diffraction (LEED)-Spot Profile Analysis and Auger Electron Spectroscopy (AES) have been used to study the response of Mo(100) single crystal surfaces to Q-switched, frequency doubled Nd:YAG laser pulses. The experiments were conducted in a special ultra-high vacuum (UHV) system which allowed the surfaces to be irradiated under controlled conditions. Laser fluences both above and below the melt threshold were employed. For the melted surfaces, good epitaxial regrowth was observed. The spot profile analysis indicates the formation of random islands on the surfaces. Surfaces which had been previously disordered by 3 KeV Ar+ implantation were laser surface melted and observed to regrow epitaxially as has been observed in the case of ion implanted silicon. The formation of the islands and stepped structures is explained by considering the activation of dislocation sources by the induced thermal stresses resulting in slip.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 3
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. Helms, A.L. Jr.,, Draper, C.W., Jacobson, D.C., Poate, J.M., and Bernasek, S.L., in ENERGY BEAM-SOLID INTERACTIONS AND TRANSIENT THERMAL PROCESSING, Biegelsen, , Rozgonyi, , and Shank, eds., (Elsevier North Holland, New York, 1985) in Press.Google Scholar
2. Buene, L., Jacobson, D.C., Nakahara, S., Poate, J.M., Draper, C.W., and Hirvonen, J.K., in LASER AND ELECTRON-BEAM SOLID INTERACTIONS AND MATERIALS PROCESSING, Gibbons, , Hess, , and Sigmon, eds., (Elsevier North Holland, New York, 1981), pp. 583–590.Google Scholar
3. Buene, L., Kaufmann, E.N., Preece, C.M., and Draper, C.W., in LASER AND ELECTRON-BEAM SOLID INTERACTIONS AND MATERIALSPROCESSING, Gibbons, , Hess, , and Sigmon, eds., (Elsevier North Holland, New York,1981), pp. 591–597.Google Scholar
4. Porteus, J.O., Decker, D.L., Jernigan, J.L., Faith, W.N., and Bass, M., IEEE J. of Quantum Electronics, QE–14, 776 (1978).CrossRefGoogle Scholar
5. Porteus, J.O., Soileau, N.J., and Fountain, C.W., Appl. Phys. Lett., 29, 156 (1976).CrossRefGoogle Scholar
6. Chun, M.K., and Rose, K., J. of Appl. Phys., 41, 614 (1970).CrossRefGoogle Scholar
7. Haessner, F., and Seitz, W., J. of Mat. Sci., 6, 16 (1971).CrossRefGoogle Scholar
8. Metz, S.A., and Smidt, F.A. Jr.,, Appl. Phys. Lett., 19, 207 (1971).CrossRefGoogle Scholar
9. Musal, H.N. Jr.,, Symp. on Optical materials for High Power Lasers, Boulder, (1979), pp. 159.Google Scholar
10. Bechtel, J.H., J. of Appl. Phys., 46, 1585 (1975).CrossRefGoogle Scholar
11. Lax, M., J. of Appl. Phys., 48, 3919 (1977).CrossRefGoogle Scholar
12. L.R., Tucker, T.R., Schriempf, J.T., Stegman, R.L., and Mets, S.A., J. of Appl. Phys., 47, 1415 (1976).Google Scholar
13. Rimini, E., in SURFACE MODIFICATION AND ALLOYING BY LASER, ION AND ELECTRON BEAMS, Poate, , Foti, , and Jacobson, (Plenum, New York, 1981), ch. 2.Google Scholar
14. Lagally, M.G., Appl. of Surf. Sci., 13, 260 (1982).CrossRefGoogle Scholar
15. Lu, T.M., and Lagally, M.G., Surf. Sci., 120, 47 (1982).CrossRefGoogle Scholar
16. Henzler, M., in ELECTRON SPECTROSCOPY FOR SURFACE ANALYSIS, Ibach, ed., (Springer, Berlin, 1977), ch. 4.Google Scholar
17. Henzler, M., Surf. Sci., 73, 240 (1978).CrossRefGoogle Scholar
18. Houston, J.E., and Park, R.L., Surf. Sci., 21, 209 (1970).CrossRefGoogle Scholar
19. Gronwald, K.D., and Henzler, M., Surf. Sci., 117, 180 (1982).CrossRefGoogle Scholar
20. Henzler, M., Appl. of Surf. Sci., 11/12, 450 (1982).CrossRefGoogle Scholar
21. Foti, G., and Rimini, E., in LASER ANNEALING OF SEMICONDUCTORS, Poate, and Mayer, eds., (Academic, New York, 1982), ch. 7.Google Scholar
22. Helms, A.L. Jr.,, Schiedt, W.A., Biwer, B.M., and Bernasek, S.L., to be published.Google Scholar
23. Tommet, T.N., Olszewski, G.B., Chadwick, P.A., and Bernasek, S.L., Rev. Sci. Instrum., 50, 147, (1979).CrossRefGoogle Scholar
24. Salmeron, M., Somorjai, G.A., and Chianelli, R.R., Surf. Sci., 127, 526 (1983).CrossRefGoogle Scholar
25. Hull, D., Byron, J.F., and Noble, F.W., Can. J. of Phys., 45, 1091 (1967).CrossRefGoogle Scholar