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A Universal Thermal Module™ for Clusterable RTP and MOCVD Applications

Published online by Cambridge University Press:  15 February 2011

Mehrdad M. Moslehi ,
Tom Omstead ,
Yong Jin Lee ,
Ahmad Kermani ,
Lino Velo  and
Charles Schaper
Mehrdad M. Moslehi
Affiliation:
CVC Products, Inc., 525 Lee Road, P.O. Box 1886, Rochester, NY 14603-1886
Tom Omstead
Affiliation:
CVC Products, Inc., 525 Lee Road, P.O. Box 1886, Rochester, NY 14603-1886
Yong Jin Lee
Affiliation:
CVC Products, Inc., 525 Lee Road, P.O. Box 1886, Rochester, NY 14603-1886
Ahmad Kermani
Affiliation:
CVC Products, Inc., 525 Lee Road, P.O. Box 1886, Rochester, NY 14603-1886
Lino Velo
Affiliation:
CVC Products, Inc., 525 Lee Road, P.O. Box 1886, Rochester, NY 14603-1886
Charles Schaper
Affiliation:
CVC Products, Inc., 525 Lee Road, P.O. Box 1886, Rochester, NY 14603-1886
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Abstract

A Universal Thermal Module™ (UTM™) has been developed for vacuum-integrated cluster RTP and MOCVD as well as stand-alone atmospheric RTP applications. The UTM™ architecture provides highly modular RTP and MOCVD tool configurations for various single-wafer thermal processes. The UTM™ design comprises a temperature-controlled UHV-grade process chamber as well as an ultraclean gearless wafer rotation assembly for improved temperature uniformity and enhanced built-in reliability. The UTM™ RTP employs bottom/backside wafer heating using a multi-zone axisymmetric illuminator and a reflective multi-zone gas showerhead located above the wafer. Precision RTP control is achieved using a multi-zone controller in conjunction with a multipoint sensor system with real-time multi-zone compensations for wafer emissivity and illuminator light interference effects. The RTP temperature measurement and control techniques fully compensate for any axisymmetric or non-axisymmetric wafer emissivity patterns, eliminating the need for pre-RTP wafer backside conditioning. The UTM™ showerhead provides capabilities for ultraclean multi-zone gas injection and in-situ RF plasma for MOCVD and RTCVD processes. The UTM™ MOCVD module meets the most stringent specifications and tool parameters for various metallization and high-K dielectric deposition applications. This module has been used for deposition of low-resistivity copper films with excellent void-free sub-half-micron gap fill for high-performance multilevel interconnects. The UTM™ RTP and MOCVD modules have been implemented based on design optimizations in a virtual reactor environment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 159
Copyright
Copyright © Materials Research Society 1995

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References

1. Moslehi, M., Paranjpe, A., Velo, L., and Kuehne, J., Solid State Technol., 37, (May 1994).Google Scholar
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