Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T15:53:14.677Z Has data issue: false hasContentIssue false
  • English
  • Français

Universal Energy Dependence of Sputtering Yields At Low Ion Energy

Published online by Cambridge University Press:  16 February 2011

J. Muri  and
Ch. Steinbrüchel
J. Muri
Affiliation:
Materials Engineering Department and Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy, NY 12180–3590
Ch. Steinbrüchel
Affiliation:
Materials Engineering Department and Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy, NY 12180–3590
Get access

Abstract

Sputtering yields Y(E)at ion energies E keV are shown to be described by the equation Y(E) = A(En - ) where A, n, and the threshold energy Eth are constants characteristic for a particular projectile/target combination. Examination of a wide variety of systems reveals that n = 0.5 provides an excellent universal representation of a large body of data, including physical sputtering of metals by noble gas ions, selfsputtering of metals, as well as physical and chemical sputtering of Si and SiO2. The above value for n is consistent with a 1/r4 power law atom-atom interaction potential within Sigmund's theory of sputtering. Another conclusion is that the effect of Eth on Y(E) must be taken into account at ion energies as high as 1 keV, not just near the sputtering threshold.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 41
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Roy, R.A., Cuomo, J.J., and Yee, D.S., J. Vac. Sci Technol. A 6, 1621 (1988).Google Scholar
[2] Ohmi, T., Matsudo, K., Shibata, T., Ichikawa, T., and Iwabuchi, H., Appl. Phys. Lett. 53, 364 (1988).Google Scholar
[3] Flamm, D.L., Donnelly, V.M., and Ibbotson, D.E., in VLSI Electronics Microstructure Science, edited by Einspruch, N.G. and Brown, D.M. (Academic, New York, 1984), pp. 190–252. Google Scholar
[4] Pang, S.W., J. Electrochem. Soc. 133, 784 (1986).Google Scholar
[5] Steinbrüchel, Ch., Appl. Phys. Lett. 55, 1960 (1989).Google Scholar
[6] Sigmund, P., in Sputtering by Ion Bombardment I, Vol.47 of Topics in Applied Physics, edited by Behrisch, R. (Springer, Berlin, 1981), p. 9.Google Scholar
[7] Sigmund, P., Nucl. Instrum. Methods B27, 1 (1987).Google Scholar
[8] Wilson, W.D., Haggmark, L.G., and Biersack, J.P., Phys. Rev. 15, 2458, (1977).Google Scholar
[9] Zalm, P.C., J. Vac. Sci. Technol. B2, 151 (1984).Google Scholar
[10] Matsunami, N., Yamamura, Y., Itikawa, Y., Itoh, N., Kazumata, Y., Miyagawa, S., Morita, M., and Shimizu, R., Radiat. Eff. Lett. 57, 15 (1980).Google Scholar
[11] Yamamura, Y., Matsunami, N., and Itoh, N., Radiat. Eff. Lett. 68, 83 (1982).Google Scholar
[12] Bohdansky, J., Nucl. Instrum. Methods B2, 587 (1984).Google Scholar
[13] Hayward, W.H. and Wolter, A.R., J. Appl. Phys. 40, 2911 (1969).Google Scholar
[14] Laegreid, N. and Wehner, G.K., J. Appl. Phys. 32, 365 (1961).Google Scholar
[15] Rosenberg, D. and Wehner, G.K., J. Appl. Phys. 33, 1842 (1962).Google Scholar
[16] Muri, J., M.S. Thesis, Rensselaer Polytechnic Institute (1990).Google Scholar
[17] Steinbrüchel, Ch. (unpublished results).Google Scholar
[18] Steinbrüchel, Ch., Appl. Phys. A36, 37 (1985).Google Scholar
[19] Steinbrüchel, Ch., Mater. Res. Soc. Symp. Proc. 129, 477 (1989).Google Scholar