Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-27T00:04:20.335Z Has data issue: false hasContentIssue false
  • English
  • Français

Unipolar Resistive Switching and Associated Photoresponse in Sm doped BiFeO3 Thin Film Grown by RF Sputtering

Published online by Cambridge University Press:  31 May 2013

Rajesh K. Katiyar ,
Pankaj Misra ,
G. L Sharma ,
Gerardo Morell ,
J. F Scott  and
Ram S. Katiyar
Rajesh K. Katiyar
Affiliation:
Department of Physics and Institute for Functional Nano materials, University of Puerto Rico, San Juan, Puerto Rico, PR-00936, USA
Pankaj Misra
Affiliation:
Department of Physics and Institute for Functional Nano materials, University of Puerto Rico, San Juan, Puerto Rico, PR-00936, USA
G. L Sharma
Affiliation:
Department of Physics and Institute for Functional Nano materials, University of Puerto Rico, San Juan, Puerto Rico, PR-00936, USA
Gerardo Morell
Affiliation:
Department of Physics and Institute for Functional Nano materials, University of Puerto Rico, San Juan, Puerto Rico, PR-00936, USA
J. F Scott
Affiliation:
Department of Physics and Institute for Functional Nano materials, University of Puerto Rico, San Juan, Puerto Rico, PR-00936, USA Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 OHE, UK
Ram S. Katiyar
Affiliation:
Department of Physics and Institute for Functional Nano materials, University of Puerto Rico, San Juan, Puerto Rico, PR-00936, USA
Get access

Abstract

Nonvolatile unipolar resistive switching has been observed in Sm doped BFO thin films in Pt/Sm: BFO/SRO stack geometry. The initial forming voltage was found to be ∼ 11 V. After the forming process repeatable switching of the resistance of Sm:BFO film was obtained between low and high resistance states with nearly constant resistance ratio ∼ 105 and non overlapping switching voltages in the range of 0.7-1 V and 4-6 V respectively. The temperature dependent measurements of the resistance of the device indicated metallic and semiconducting conduction behavior in low and high resistance states respectively. The current conduction mechanism of the Pt/Sm:BFO/SRO device in low resistance states was found to be dominated by the Ohmic behavior while in case of high resistance state and at high voltages it deviated significantly from normal Ohmic behavior and was found to correspond the Pool-Frankel (PF) emission. The Pt/Sm:BFO/SRO structure also showed efficient photo-response in high and low resistance states with increase in photocurrent which was significantly higher in low resistance state when illuminated with white light.

Keywords

ferroelectricelectrical propertiesmemory
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1577: Symposium XX – Oxide Thin Films and Heterostructures for Advanced Information and Energy Technologies , 2013 , mrss13-1577-xx08-09
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Jeong, Doo Seok, Thomas, Reji, Katiyar, R S, Scott, J F, Kohlstedt, H, A Petraru and Cheol Seong Hwang Rep. Prog. Phys. 75, 076502 (2012).CrossRefGoogle Scholar
Yin, Kuibo, Li, Mi, Liu, Yiwei, He, Congli, Zhuge, Fei, et al. . Appl. Phys. Lett. 97, 042101 (2010)CrossRefGoogle Scholar
Yao, Yingbang, Liu, Wenchao, Chan, Yukkwan, Leung, Chiwah, Mak, Cheeleung and Ploss, Bernd, Int. J. Appl. Ceram. Technol. 8, 1246–1253 (2011).CrossRefGoogle Scholar
Zhang, S. T., Lu, M. H., Wu, D., Chen, Y. F., and Ming, N. B., Appl. Phys. Lett. 87, 262907 (2005).CrossRefGoogle Scholar
Palai, R., Katiyar, R. S., Schmid, H., Tissot, P., Clark, S. J., Robertson, J., Redfern, S. A. T., Catalan, G., Scott, J. F., Phys. Rev. B 77, 014110 (2008).CrossRefGoogle Scholar
Chen, Shih-Wei, Wu, Jenn-Ming, Thin Solid Films 519, 499–504 (2010)CrossRefGoogle Scholar
Simmons, John G., Phys. Rev. 155, 657–660 (1967)CrossRefGoogle Scholar
Lee, D., Baek, S. H., Kim, T. H., Yoon, J.-G., Folkman, C. M., Eom, C. B., and Noh, T. W., Phys. Rev. B 84, 125305 (2011).CrossRefGoogle Scholar