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Uniformity of Arsenic Dimer and Tetramer Fluxes from a Valved Arsenic Cracking Source in MBE

Published online by Cambridge University Press:  26 February 2011

George A. Patterson ,
James S.C. Chang  and
Forrest G. Kellert
George A. Patterson
Affiliation:
Hewlett-Packard Co., Microwave Technology Division, 1412 Fountain Grove Parkway, Santa Rosa, California 95403
James S.C. Chang
Affiliation:
Hewlett-Packard Co., Microwave Technology Division, 1412 Fountain Grove Parkway, Santa Rosa, California 95403
Forrest G. Kellert
Affiliation:
Hewlett-Packard Co., Microwave Technology Division, 1412 Fountain Grove Parkway, Santa Rosa, California 95403
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Abstract

We have studied the uniformity of the arsenic flux from a commercially available valved arsenic cracker source for MBE. There are many epitaxial structures that require a uniform arsenic flux distribution for rotated epitaxial growth and, in the non-rotated case, for RHEED. For non-stoichiometric GaAs growth at low substrate temperatures, which results in arsenic precipitates being formed during the in-situ anneal process, a specific As/Ga ratio must be used to maintain high crystalline quality and to achieve the desired electrical properties. Also, in the growth of InGaAsP the As/P ratio is equally important for lattice match and quality device results. We report on the uniformity of amorphous arsenic (a-As) films condensed on the surface of 3" diameter sapphire wafers slightly below room temperature. Sapphire substrates were used in place of GaAs wafers to facilitate the use of x-ray fluorescence for the measurement of the arsenic film uniformity. Uniformity maps will be presented for rotated and non-rotated a-As depositions of As2 and As4. Results indicate the uniformity of a-As, As4, films to have a standard deviation of < 2.5% across a 3" diameter substrate for the rotated case. Characteristics of the non-rotated case will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 231
Copyright
Copyright © Materials Research Society 1995

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References

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