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Uniform dome-shaped self-assembled Ge islands by UHV/CVD after boron pre-deposition

Published online by Cambridge University Press:  01 February 2011

Ning Deng ,
Wentao Huang  and
Peiyi Chen
Ning Deng*
Affiliation:
Institute of Microelectronics, Tsinghua University, Beijing, 100084, P.R., China
Wentao Huang
Affiliation:
Institute of Microelectronics, Tsinghua University, Beijing, 100084, P.R., China
Peiyi Chen
Affiliation:
Institute of Microelectronics, Tsinghua University, Beijing, 100084, P.R., China
*
Tel:+86 10 62789151ext 302, Fax: +86 10 62771130, E-mail: [email protected]
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Abstrat

Effect of pre-deposited boron atoms on self-assembled growth of Ge islands on Si(100) substrate by UHV/CVD was investigated by atomic force microscopy (AFM). Proportion of dome-shaped Ge islands increases with the increasing of flux of B2H6. Quite uniform dome-shaped Ge quantum dots with size distribution of less than ±3%, which is narrower than the size distribution of typical bimodal self-assembled Ge dots, were obtained after appropriate boron pre-deposition. Based on the shape transition model we proposed before, the uniform size and shape distributions after boron pre-deposition were explained. The results show that boron pre-deposition can be used to fabricate uniform Ge quantum dots to meet the requirements of opto-electronic devices.

Keywords

Ge quantum dotsUHV/CVDboron pre-deposition.
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F7.3
Copyright
Copyright © Materials Research Society 2005

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References

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