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A Unified Treatment of The Thermal Donor Hierarchies in Silicon and Germanium*

Published online by Cambridge University Press:  28 February 2011

Jeffrey T. Borenstein  and
James W. Corbett
Jeffrey T. Borenstein
Affiliation:
Physics Department, SUNY/Albany, Albany NY 12222, USA.
James W. Corbett
Affiliation:
Physics Department, SUNY/Albany, Albany NY 12222, USA.
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Abstract

The hierarchies of thermal donor binding energies produced by annealing oxygen-containing silicon or germanium at ca. 450°C are explained by using a generalized perturbation model which involves a standard repulsion parameter for the interaction between agglomerating oxygen atoms and the shallow donor electrons. This model is capable of fitting the ground state ladders for both charge states of the thermal donors in both Si and Ge, since differences between the two ladders can–ee explained entirely by the change in the electron-effective-mass and dielectric constant of the host.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 159
Copyright
Copyright © Materials Research Society 1986

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Footnotes

*

Supported in part by the JPL-DOE Flat-Plate Solar Array Program, the U.S.A.R.O., and the Mobil Foundation.

References

REFERENCES

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