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Unified Model for Ballistic Transport and Gas-Solid Reactions in Features

Published online by Cambridge University Press:  25 February 2011

T. S. Cale ,
G. B. Raupp  and
T. H. Gandy
T. S. Cale
Affiliation:
Department of Chemical, Bio & Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6006
G. B. Raupp
Affiliation:
Department of Chemical, Bio & Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6006
T. H. Gandy
Affiliation:
Department of Chemical, Bio & Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6006
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Abstract

The three dimensional equations which govern free molecular or ballistic transport and heterogeneous gas-solid reactions in features on patterned wafers during low pressure processing are reviewed. The governing equations specific to long rectangular trenches are extended to include nonuniform molecular velocity distributions in the source volume above the wafer as well as surface diffusion of adsorbed species or intermediates. Introduction of reaction stoichiometries and kinetic expressions for general deposition and etch reactions completes the specification of the problem. Local generalized sticking factors arise in the process of nondimensionalizing the governing equations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 375
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Cale, T. S. and Raupp, C. B., J. Vac. Sel. Technol., B8(4), 649(1990).Google Scholar
2. Cale, T. S. and Raupp, G. B., in Advanced Metallizations in Microelectronics, MRS Symposium Ser., Vol. 181, p.603, 1990.Google Scholar
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