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Unidirectional Solidification and Single Crystal Growth of Al-rich Ti-Al Alloys

Published online by Cambridge University Press:  01 February 2011

Anne Drevermann ,
Georg J. Schmitz ,
Günther Behr ,
Elke Schaberger-Zimmermann  and
Christo Guguschev
Anne Drevermann
Affiliation:
[email protected], ACCESS e.V., Germany
Georg J. Schmitz
Affiliation:
[email protected], ACCESS e.V., Germany
Günther Behr
Affiliation:
[email protected], Leibniz-Institut für Festkörper- und Werkstoffforschung, Dresden, Germany
Elke Schaberger-Zimmermann
Affiliation:
[email protected], Foundry Institute, Aachen, Germany
Christo Guguschev
Affiliation:
[email protected], Leibniz-Institut für Festkörper- und Werkstoffforschung, Dresden, Germany
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Abstract

To investigate the basic mechanical and thermomechanical properties of TiAl alloys with high Aluminium content sufficiently large single crystalline domains are required. To fabricate these samples undirectional solidification in Bridgman Stockbarger furnaces and optical floating zone devices were used. Focus of investigation were grain selection and impurity contamination. Both processes allow for growth of single crystal domains of some millimetres diameter and a few centimetres length. However in a Bridgman Stockbarger furnace the long contact times with the crucible proved detrimental to oxidation issues whereas in the optical floating zone device oxidation is negligible due to containerless processing.

Keywords

nucleation & growthzone meltingcrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1128: Symposium U – Advanced Intermetallic-Based Alloys for Extreme Environment and Energy Applications , 2008 , 1128-U03-03
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1. Palm, M., Zhang, L.C., Stein, F., Sauthoff, G., Intermetallics 10, 523 (2002).Google Scholar
2. Nakano, T., Hayashi, K., Umakoshi, Y., Phil. Mag. A, 763, (2002).Google Scholar
3. Johnson, D. R., Inui, H., Yamaguchi, M., Intermetallics 6, 547 (1998).Google Scholar
4. Schmitz, G.J., Weiss, H., Wolters, Ch., Hashagen, U., Zeimetz, B., Proceedings of the 2nd European Conference on Advanced Materials and Processes, Cambridge, ed. by Clyne, T.W., 89 (1991).Google Scholar
5. Paninski, M., Drevermann, A., Schmitz, G.J., Palm, M., Stein, F., Heilmaier, M., Engberding, N., Saage, H., Sturm, D., in Ti-2007 Science and Technology, ed. by Niinomi, M. (Japan Institute of Metals) 1059.Google Scholar
6. Drevermann, A., Pickmann, C., Sturz, L., Zimmermann, G., Proceedings of 2004 IEEE International Ultrasonics, Ferroelectrics and Frequency Control Joint 50th Anniversary Conference, Montreal, 537.Google Scholar
7. Balbashov, A.M., Egorov, S.K., J. Crystal Growth 52, 498 (1981).Google Scholar
8. Souptel, D., Löser, W. and Behr, G., J. Crystal Growth 300, 538 (2007).Google Scholar
9. Menand, A., Zapolsky-Tatarenko, H., Nérac-Partaix, A., Mater. Sci. Eng. A250, 55 (1998).Google Scholar