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Uniaxial Stress Studies of Optical Centres in Silicon

Published online by Cambridge University Press:  26 February 2011

Gordon Davies
Gordon Davies*
Affiliation:
Physics Department, King's College London, Strand, London WC2R 2LS, UK.
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Abstract

Uniaxial stress perturbations have provided considerable data on the properties of optical centres in silicon. This paper reviews their uses in determining atomic kinetics and the symmetry of optical centres. Examples are given of the different effects of stress-induced interactions between states, and of the thermalisation of stress-split states. Uniaxial stresses are shown to be useful in grouping together similar optical centres, and in understanding the defect-induced widths of zero phonon lines and the vibronic properties of centres. At some optical centres, “internal” stresses can be used to contruct bound states from perfect crystal states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 65
Copyright
Copyright © Materials Research Society 1988

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