Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-27T01:43:43.507Z Has data issue: false hasContentIssue false
  • English
  • Français

Uniaxial Stress Studies of Optical Centres in Silicon

Published online by Cambridge University Press:  26 February 2011

Gordon Davies
Gordon Davies*
Affiliation:
Physics Department, King's College London, Strand, London WC2R 2LS, UK.
Get access

Abstract

Uniaxial stress perturbations have provided considerable data on the properties of optical centres in silicon. This paper reviews their uses in determining atomic kinetics and the symmetry of optical centres. Examples are given of the different effects of stress-induced interactions between states, and of the thermalisation of stress-split states. Uniaxial stresses are shown to be useful in grouping together similar optical centres, and in understanding the defect-induced widths of zero phonon lines and the vibronic properties of centres. At some optical centres, “internal” stresses can be used to contruct bound states from perfect crystal states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 65
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Refrences

[1]Benton, J.L., Lee, K.M., Freeland, P.E. and Kimerling, L.C. ICDS13, 647Google Scholar
[2]Laude, L.D., Pollack, F.H. and Cardona, M.Phys. Rev. B3 (1971) 2623Google Scholar
[3]Kaplyanskii, A.A.Opt. and Spectrosc. 16 (1964) 329Google Scholar
[4]Koster, G.F., Dimmock, J.O., Wheeler, R.G. and Statz, H. “Properties of the 32 point groups” (Cambridge : MIT) 1963Google Scholar
[5]Tinkham, M.“Group Theory and Quantum Mechanics” (New York: McGraw Hill) 1964Google Scholar
[6]Nye, J.F.“Physical properties of crystals : their representation by tensors and matrices” (Oxford: Clarendon) 1985Google Scholar
[7]McSkimmin, H.J. and Andreatch, P.J.App. Phys. 35 (1964) 2161Google Scholar
[8]Bosomworth, D.R., Hayes, W., Spray, A.R.L. and Watkins, G.D.Proc. R. Soc. A317 (1970) 133Google Scholar
[9]Haas, C.J. Phys. Chem. Solids 15 (1960) 108Google Scholar
[10]Tipping, A.K., Newman, R.C., Newton, D.C. and Tucker, J.H.Mat. Sci. Forum 10–12 (1986) 887Google Scholar
[11]Mikkelsen, J.C. in Materials Research Soc. Symp. Proc. 59 (1986) 19Google Scholar
[12]Mikkelsen, J.C.App. Phys. Lett. 40 (1982) 336Google Scholar
[13]Newman, R.C., this conferenceGoogle Scholar
[14]Stavola, M.App. Phys. Lett. 42 (1983) 73Google Scholar
[15]Newman, R.C.J. Phys. C18 (1985) L861Google Scholar
[16]Oates, A.S., Newman, R.C., Tucker, J.M., Davies, G. and Lightowlers, E.C.Materials Research Soc. Symp. Proc. 59 (1986) 59Google Scholar
[17]Oates, A.S., Binns, M.J., Newman, R.C., Tucker, J.H., Wilkes, J.G. and Wilkinson, A.J. Phys. C 17 (1984) 5695Google Scholar
[18]Davies, G., Lightowlers, E.C., Newman, R.C. and Oates, A.S.Semicond. Sci. Technol. 2 (1987) 524Google Scholar
[19]Trombetta, J.M. and Watkins, G.D.App.Phys. Lett. 51 (1987) 1103Google Scholar
[20]Wagner, P. in Materials Research Soc. Symp. Proc. 59 (1986) 125Google Scholar
[21]Watkins, G.D. and Brower, K.L.Phys. Rev. Lett. 36 (1976) 1329Google Scholar
[22]Woolley, R.A., Lightowlers, E.C., Tipping, A.K., Claybourn, M. and Newman, R.C.Mat. Sci. Forum 10–12 (1986) 929Google Scholar
[23]Stavola, M.App.Phys. Lett. 44 (1984) 514Google Scholar
[24]Cheng, L.J., Corelli, J.C., Corbett, J.W. and Watkins, G.D.Phys. Rev. 132 (1966) 761Google Scholar
[25]Kaplyanskii, A.A.Optics. Spectrosc. 16 (1964) 557Google Scholar
[26]Hughes, A.E. and Runciman, W.A.Proc. Phys. Soc. 90 (1967) 827Google Scholar
[27]Davies, G. and Nazare, M.H.J. Phys. C 13 (1980) 4127Google Scholar
[28]Davies, G., Lightowlers, E.C., Stavola, M., Bergman, K. and Svensson, B., Phys. Rev. B35 (1987) 2755Google Scholar
[29]Nazare, M.H.Europhys. Lett. 4 (1987) 73Google Scholar
[30]Foy, C.P.J. Phys. C 15 (1982) 2059Google Scholar
[31]Thonke, K., Hangleiter, A., Wagner, J. and Sauer, R.J. Phys. C 18 (1985) L795Google Scholar
[32]Davies, G., Canham, L.T. and Lightowlers, E.C.J. Phys. C 17 (1984) L173Google Scholar
[33]Davies, G.J. Phys. C 17 (1984) 6331Google Scholar
[34]Weber, J., Bauch, H. and Sauer, R.phys. Rev. B25 (1982) 7688Google Scholar
[35]Bergman, K., Grossman, G., Grimmeiss, H.G. and Stavola, M.Phys. Rev. Lett. 56 (1986) 2827Google Scholar
[36]Davies, G. and Penchina, C.M.Proc. R. Soc. A338 (1974) 359Google Scholar
[37]Davies, G., Lightowlers, E.C. and Ciechanowska, Z.E.J. Phys. C20 (1987) 191Google Scholar
[38]Kane, M.J., Dean, P.J. and Skolnick, M.S.J Phys C17 (1984) 6127Google Scholar
[39]Davies, G., Lightowlers, E.C. and Carmo, M.doJ. Phys. C16 (1983) 5503Google Scholar
[40]Davies, G., Lightowlers, E.C., Griffiths, D. and Wilkes, J.G.Semicond. Sci. Technol. 2 (1987) 554Google Scholar
[41]Burger, N., Thonke, K. and Sauer, R.Phys. Rev. Lett. 52 (1984) 1645Google Scholar
[42]Tkachev, V.D., Mudryi, A.V. and Minaev, N.S.Phys. Status Solidi 81 (1984) 313Google Scholar
[43]Thonke, K. (1986) private communicationGoogle Scholar
[44]Foy, C.P., Carmo, M.C. do, Davies, G. and Lightowlers, E.C.J. Phys. C14(1981) L7Google Scholar
[45]Brower, K.L.Phys. Rev. B9 (1974) 2607Google Scholar
[46]Lightowlers, E.C., Canham, L.T., Davies, G., Thewalt, M.L.W. and Watkins, S.P.Phys. Rev. B299( 1984) 4517Google Scholar
[47]Kulakovskii, V.D., Levinson, I.B. and Timofeev, V.B.Sov. Phys. Solid State 20 1978) 230Google Scholar
[48]Lax, M. and Hopfield, J.J.Phys. Rev.124(1961) 115Google Scholar
[49]Ciechanowska, Z., Davies, G. and Lightowlers, E.C.Solid State Commun. 49 (1984) 427Google Scholar
[50]Stavola, M., Lee, K.M., Nabity, J.C., Freeland, P.E. and Kimerling, L.C.Phys. Rev. Lett.544( 1985) 2639Google Scholar
[51]Daly, D.F. and Knox, W.P. private communication (1970)Google Scholar
[52]Davies, G., Lightowlers, E.C., Woolley, R, Newman, R.C. and Oates, A.S. Proc. 13th Int. Conf. on Defects in Semicond. (1985) 725Google Scholar
[53]Takano, Y. and Malei, M. in Semi. Silicon 1973 (1973) 469Google Scholar
[54]Eshelby, J.D.Solid State Phys. 3 (1956) 79Google Scholar
[55]Stoneham, M.A.Rev. Mod. Phys. 41 (1969) 82Google Scholar
[56]Davies, G.J. Phys.D4( 1971) 1340Google Scholar
[57]Bean, A.R., Newman, R.C. and Smith, R.S.J. Phys. Chem. Solids 31 (1970) 739Google Scholar
[58]Davies, O.J. Phys. C17 (1984) 6331Google Scholar
[59]Canham, L.T., Davies, G. and Lightowlers, E.C. Proc. 13th Int. Conf. on Defects in Semicond. ( AIME : 1985) 847Google Scholar
[60]Weber, J., Schmid, W. and Sauer, R.Phys. Rev. B21 (1980) 2401Google Scholar
[61]Tkachev, V.D. and Mudryi, A.V.Inst. Phys. Conf. Ser. 31 (1977) 231Google Scholar
[62]Hare, A.P.G., Davies, G. and Collins, A.T.J. Phys. C5 (1972) 1265Google Scholar