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Undoped Lec GaAs as an Infrared Bolometer Detector

Published online by Cambridge University Press:  15 February 2011

S Estill  and
M. R. Brozel
S Estill
Affiliation:
Centre for Electronic Materials, UMIST, PO Box 88, Manchester, M60 1QD, UK
M. R. Brozel
Affiliation:
Centre for Electronic Materials, UMIST, PO Box 88, Manchester, M60 1QD, UK
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Abstract

Undoped LEC GaAs grown with very low residual acceptor concentration is often low resistivity with an activation energy for conduction of 0.43 eV. We demonstrate that this material can form a very sensitive bolometer element and show how large two dimensional bolometer arrays might be fabricated from this material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 27
Copyright
Copyright © Materials Research Society 1994

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