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Undoped gallium antimonide studied by positron annihilation spectroscopy

Published online by Cambridge University Press:  01 February 2011

S. K. Ma ,
C. C. Ling ,
H. M. Weng  and
D. S. Hang
S. K. Ma
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
C. C. Ling*
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
H. M. Weng
Affiliation:
Department of Modern Physics, University of Science and Technology of China, Hefei, China
D. S. Hang
Affiliation:
Department of Physics, Nanjing University, Nanjing, China
*
* e-mail correspondence: [email protected]
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Abstract

Positron lifetime spectroscopy has been used to study the vacancy type defects in undoped gallium antimonide. Temperature dependent positron trapping into the VGa-related defect having a characteristic lifetime of 310ps was observed in the as-grown sample. The lifetime data were well described by a model involving the thermal ionization (0/-) of the VGa-related defect and its ionization energy was found to be E(0/-)=83meV. For the electron irradiated sample, the VGa-related defect with lifetime of 310ps that was found in the non-irradiated samples was also identified. Moreover, another lifetime component (280ps) was only observed in the electron irradiated sample but not in the non-irradiated sample. It was also attributed to the VGa-related defect. The two identified VGa-related defects should have different microstructures because of their difference in characteristic lifetimes. The 280ps component remains thermally stable after the 500°C annealing while the 310ps component anneals at 300°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z5.30
Copyright
Copyright © Materials Research Society 2004

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References

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