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Undissociated Dislocations and Intermediate Defects in as+ Ion Damaged Silicon

Published online by Cambridge University Press:  15 February 2011

H. Foell ,
T. Y. Tan  and
W. Krakow
H. Foell
Affiliation:
IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598, USA
T. Y. Tan
Affiliation:
IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598, USA
W. Krakow
Affiliation:
IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598, USA
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Abstract

Undissociated dislocation dipoles and intermediate defects are detected in As+ ion damaged Si using the lattice resolution technique of transmission electron microscopy. The present results are consistent with our proposed dislocation nucleation models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 173
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. Corbet, J. W. and Bourgoin, J. C., in “Point Defects in Solids”, eds. Crawford, J. H. and Slifkin, L. M. (Plenum, New York, 1975), Vol. 2, pp. 1.Google Scholar
2. Tan, T. Y., Phil. Mag, to be published.Google Scholar
3. Tan, T. Y., this proceeding.Google Scholar