Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-05T14:00:55.240Z Has data issue: false hasContentIssue false
  • English
  • Français

Understanding Selectivity on Germanium/SiO2 Chemical Mechanical Planarization Through Design of Experiments

Published online by Cambridge University Press:  01 June 2015

Ayse Karagoz ,
James Mal  and
G. Bahar Basim
Ayse Karagoz
Affiliation:
Ozyegin University, Department of Mechanical Engineering, Nisantepe Mevki, Orman Sokak, No 13, Alemdag, Cekmekoy, 34794, Istanbul, TURKEY
James Mal
Affiliation:
Oregon State University, Department of Chemical Engineering, 103 Gleeson Hall, Corvallis, 97331, Oregon, USA
G. Bahar Basim*
Affiliation:
Ozyegin University, Department of Mechanical Engineering, Nisantepe Mevki, Orman Sokak, No 13, Alemdag, Cekmekoy, 34794, Istanbul, TURKEY
*
*Email: [email protected]
Get access

Abstract

The continuous trend of achieving more complex microelectronics with smaller nodes yet larger wafer sizes in microelectronics manufacturing lead to aggressive development requirements for chemical mechanical planarization (CMP) process. Particularly, beyond the 14 nm technology the development needs made it a must to introduce high mobility channel materials such as Ge. CMP is an enabler for integration of these new materials into future devices. In this study, we implemented a design of experiment (DOE) methodology in order to understand the optimized CMP slurry parameters such as optimal concentration of surface active agent (sodium dodecyl sulfate-SDS), concentration of abrasive particles and pH from the viewpoint of high removal rate and selectivity while maintaining a defect free surface finish. The responses examined were particle size distribution (slurry stability), zeta potential, material removal rate (MRR) and the surface defectivity as a function of the selected design variables. The impact of fumed silica particle loadings, oxidizer (H2O2) concentration, SDS surfactant concentration and pH were analyzed on Ge/silica selectivity through material removal rate (MRR) surface roughness and defectivity analyses.

Keywords

CMPGethin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1790: Symposium AA – Materials for Beyond the Roadmap Devices in Logic, Power and Memory , 2015 , pp. 19 - 24
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Fitzgerald, E. A., Annu. Rev. Mater. Sci. 25, 417 ∼(1995) [Rep05]CrossRefGoogle Scholar
Fitzgerald, E. A., Xie, Y.-H., Monroe, D., Silverman, P. J., Kuo, J. M., Kortan, A. R., Thiel, F. A., and Weir, B. E., J. Vac. Sci. Technol. B 10, 1807 (1992).CrossRefGoogle Scholar
Mitard, J. et al. ., Symposium on VLSI Technology, Digest of Technical Papers., 82, (2009).Google Scholar
Peddeti, S et al. ., Chemical Mechanical Planarization of Germanium Shallow Trench Isolation Structures using Silica Based Dispersions, Microelectronic Engineering, (93) 61–66, (2012).CrossRefGoogle Scholar
Hill, R. J. W. et al. ., Cabot. High mobility channel materials: CMP challenges and opportunities (2013) Google Scholar