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Ultraviolet Light Emitting Devices Using AlGdN

Published online by Cambridge University Press:  30 June 2011

Takashi Kita ,
Shinya Kitayama ,
Tsuguo Ishihara ,
Hirokazu Izumi ,
Yoshitaka Chigi ,
Tetsuro Nishimoto ,
Hiroyuki Tanaka  and
Mikihiro Kobayashi
Takashi Kita
Affiliation:
Department of Electrical and Electronics Engineering, Graduate School of Engineering, Kobe University, Rokkodai 1-1, Nada, Kobe 657-8501, Japan
Shinya Kitayama
Affiliation:
Department of Electrical and Electronics Engineering, Graduate School of Engineering, Kobe University, Rokkodai 1-1, Nada, Kobe 657-8501, Japan
Tsuguo Ishihara
Affiliation:
Hyogo Prefectural Institute of Technology, Yukihira 3-1-12, Suma, Kobe 654-0037, Japan
Hirokazu Izumi
Affiliation:
Hyogo Prefectural Institute of Technology, Yukihira 3-1-12, Suma, Kobe 654-0037, Japan
Yoshitaka Chigi
Affiliation:
YUMEX INC., Itoda 400, Yumesaki, Himeji, Hyogo 671-2114, Japan
Tetsuro Nishimoto
Affiliation:
YUMEX INC., Itoda 400, Yumesaki, Himeji, Hyogo 671-2114, Japan
Hiroyuki Tanaka
Affiliation:
YUMEX INC., Itoda 400, Yumesaki, Himeji, Hyogo 671-2114, Japan
Mikihiro Kobayashi
Affiliation:
YUMEX INC., Itoda 400, Yumesaki, Himeji, Hyogo 671-2114, Japan
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Abstract

We developed ultra-violet field-emission devices using rare-earth nitrides of Al1-xGdxN grown by a reactive radio-frequency magnetron sputtering technique. The Al1-xGdxN phosphor film excited by high-energy electrons shows a resolution limited, narrow intra-orbital luminescence from Gd3+ ions at 318 nm. The devise characteristics depend on injected current and acceleration voltage, which were analyzed by considering multiple excitation process of injected high-energy electrons.

Keywords

nitridefilmGd
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1342: Symposium V – Rare-Earth Doping of Advanced Materials for Photonic Applications , 2011 , mrss11-1342-v05-01
Copyright
Copyright © Materials Research Society 2011

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References

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