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Ultrathin Nitride Films Grown Under Low-Energy Ion Bombardment

Published online by Cambridge University Press:  22 February 2011

Zhong-Min Ren ,
Zhi-Feng Ying ,
Xia-Xing Xiong ,
Mao-Qi He ,
Yuan-Cheng DU ,
Liang-Yao Chen  and
Fu-Ming Li
Zhong-Min Ren
Affiliation:
Department of Physics, Fudan University, Shanghai 200433, P.R.China
Zhi-Feng Ying
Affiliation:
Department of Physics, Fudan University, Shanghai 200433, P.R.China
Xia-Xing Xiong
Affiliation:
Department of Physics, Fudan University, Shanghai 200433, P.R.China
Mao-Qi He
Affiliation:
Department of Physics, Fudan University, Shanghai 200433, P.R.China
Yuan-Cheng DU
Affiliation:
Department of Physics, Fudan University, Shanghai 200433, P.R.China
Liang-Yao Chen
Affiliation:
Department of Physics, Fudan University, Shanghai 200433, P.R.China
Fu-Ming Li
Affiliation:
Department of Physics, Fudan University, Shanghai 200433, P.R.China
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Abstract

Bombardment of silicon surfaces by low-energy nitrogen ions has been investigated as a possible process for growing films of silicon nitride at relatively low temperature(<500°C). Broad ion beams of energy 300–1200eV have been used to grow ultrathin silicon nitride films. Film thickness and chemical states are analyzed using ellipsometery, X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy(AES). As a result, thicknesses dependence on ion energy, substrate temperature and implantation time have been investigated. The thicknesses of films obtained appear to increase with ion energy in the range from 300 to 1200eV, and with time of bombardment. The thicknesses are also observed to vary slightly with substrate temperature. The growth mechanism has also been investigated and discussed. The average activation energy of nitridation rates is about 3.5meV which indicates nonthermal process kinetics, compared to an activation energy of 0.2–0.6eV for thermal nitridation. AES results show that the atomic ratio [N]/[Si] is about 1.5, larger than that of pure Si3N4. All the analyses show that silicon nitride films of about 60Å thickness have been grown on silicon by low-energy ion beam nitridation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 809
Copyright
Copyright © Materials Research Society 1994

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References

References:

1 Kaufman, H.R., J.Vac.Sci.Technol., 21 (3), 725 (1982).Google Scholar
2 Todorov, S.S. and Fossum, E.R., J.Vac.Sci.Technol. , B 6 (1), 466 (1988).Google Scholar
3 Murarka, S.P., Chang, C.C., Adams, A.C., J. Electrochem. Soc, 126, No.6, 996 (1979).Google Scholar
4 Moslehi, M.M. and Saraswat, K.C., IEEE Trans. Electron. Devices, ED–32, No.2, 106 (1985).Google Scholar
5 Soboleweski, M.A. and Helms, C.R. J.Vac.Sci.Technol., A 6 (3), 1358 (1988) .Google Scholar
6 Deal, B.E., J. Electrochem. Soc, 110, 122 (1979).Google Scholar
7 Yu, C.F., Todorov, S.S., Fossura, E.R., J.Vac.Sci.Technol., A 5 (4), 1569 (1987) .Google Scholar
8 Maillot, C., Roulet, H., Dufour, G., J.Vac.Sci.Technol., B 2 (3), 316 (1984).Google Scholar
9 Myers, S.M., Nucl.Instrum.Methods. 168, 265 (1980).Google Scholar