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Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with SiO2

Published online by Cambridge University Press:  28 July 2011

Hans-Joachim Müssig ,
Jarek Dąbrowski ,
Christian Wenger ,
Grzegorz Łupina ,
Roland Sorge ,
Peter Formanek ,
Peter Zaumseil  and
Dieter Schmeißer
Hans-Joachim Müssig
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Jarek Dąbrowski
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Christian Wenger
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Grzegorz Łupina
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Roland Sorge
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Peter Formanek
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Peter Zaumseil
Affiliation:
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Dieter Schmeißer
Affiliation:
Angewandte Physik-Sensorik, BTU Cottbus, PF 10 13 44, D-03013 Cottbus, Germany
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Abstract

We have fabricated Pr-based high-k gate dielectric films by physical vapor deposition of metallic Pr on SiO2 under ultra-high vacuum (UHV) conditions at room temperature, followed by oxidation and annealing steps. The films have been analyzed by electrical measurements, X-ray Photoelectron Spectroscopy (XPS) and Transmission Electron Microscopy (TEM). Some insight into the physical processes involved has been obtained from ab initio calculations. The high-k gate stacks consist of a SiO2-based buffer with an enhanced dielectric constant and a Pr silicate barrier with a high dielectric constant. The role of the buffer is to preserve the high quality of the SiO2/Si(001) interface, and the role of the barrier is to keep the tunneling currents low by increasing its physical thickness. A Pr film deposited on a 1.8 nm SiO2 layer, oxidized at room temperature by air, and annealed in N2 atmosphere with O2 partial pressure of 10−3 mbar results in a stack with the Capacitance Equivalent Thickness of 1.5 nm and leakage of 10−4 A/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D7.10
Copyright
Copyright © Materials Research Society 2004

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References

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