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Ultrashort Pulse Generation with Semiconductor Modelocked Lasers Using Saturable Absorbers Based on Intersubband Transitions in GaN/AlGaN Quantum Wells

Published online by Cambridge University Press:  26 February 2011

Faisal R. Ahmad ,
Paul George ,
Jahan Dawlaty ,
Fahan Rana  and
William J. Shaff
Faisal R. Ahmad
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
Paul George
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
Jahan Dawlaty
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
Fahan Rana
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
William J. Shaff
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
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Abstract

We present a novel scheme for generating high energy ultrashort pulses in modelocked semiconductor lasers using a fast saturable absorber based upon intersubband transitions (ISBT) in GaN/AlGaN superlattice. The fast electron relaxation time (∼100–300 fs) in this saturable absorber enables the generation of stable sub-100 fs pulses at the communication wavelength (1.55μm) with high pulse energies (5–10 pJ).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B4.1
Copyright
Copyright © Materials Research Society 2005

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References

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