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Ultra-Low-Energy Straintronics Using Multiferroic Composites

Published online by Cambridge University Press:  24 July 2014

Kuntal Roy
Kuntal Roy*
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, U.S.A.
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Abstract

The primary impediment to continued improvement of charge-based electronics is the excessive energy dissipation incurred in switching a bit of information. With suitable choice of materials, devices made of multiferroic composites, i.e., strain-coupled piezoelectric-magnetostrictive heterostructures, dissipate miniscule amount of energy of ∼1 attojoule at room-temperature, while switching in sub-nanosecond delay. Apart from devising memory bits, such devices can be also utilized for building logic, so that they can be deemed suitable for computing purposes as well. Here, we first review the current state of the art for building nanoelectronics using multiferroic composites. On a recent development, it is shown that these multiferroic straintronic devices can be also utilized for analog signal processing, with suitable choice of materials. By solving stochastic Landau-Lifshitz-Gilbert equation of magnetization dynamics at room-temperature, it is shown that we can achieve a voltage gain, i.e., these straintronic devices can act as voltage amplifiers.

Keywords

nanostructuremagneticpiezoelectric
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1691: Symposium BB – Materials for End-of-Roadmap Devices in Logic, Power and Memory , 2014 , mrss14-1691-bb07-04
Copyright
Copyright © Materials Research Society 2014 

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