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Ultra-High Implant Activation Efficiency In GaN Using Novel High Temperature RTP System

Published online by Cambridge University Press:  10 February 2011

X. A. Cao ,
C. R. Abernathy ,
R. K. Singh ,
S. J. Pearton ,
M. Fu ,
V. Sarvepalli ,
J. A. Sekhar ,
J. C. Zolper ,
D. J. Rieger  and
J. Han
...Show all authors
X. A. Cao
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 USA
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 USA
R. K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 USA
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 USA
M. Fu
Affiliation:
Micropyretics Heaters international, Inc., Cincinnati, OH 45212 USA
V. Sarvepalli
Affiliation:
Micropyretics Heaters international, Inc., Cincinnati, OH 45212 USA
J. A. Sekhar
Affiliation:
Micropyretics Heaters international, Inc., Cincinnati, OH 45212 USA
J. C. Zolper
Affiliation:
Office of Naval Research, Arlington, VA 22217 USA
D. J. Rieger
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185 USA
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185 USA
T. J. Drummond
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185 USA
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185 USA
R. G. Wilson
Affiliation:
Consultant, Stevenson Ranch, CA 91381 USA
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Abstract

Si+ implant activation efficiencies above 90%, even at doses of 5×1015 cm−2, have been achieved in GaN by RTP at 1400–1500°C for 10 secs. The annealing system utilizes with MoSi2 heating elements capable of operation up to 1900 °C, producing high heating and cooling rates (up to 100 °C · s−1). Unencapsulated GaN show severe surface pitting at 1300 °C, and complete loss of the film by evaporation at 1400 °C. Dissociation of nitrogen from the surface is found to occur with an approximate activation energy of 3.8 eV for GaN (compared to 4.4 eV for AIN and 3.4 eV for InN). Encapsulation with either rf-magnetron reactively sputtered or MOMBE-grown AIN thin films provide protection against GaN surface degradation up to 1400 °C, where peak electron concentrations of ∼5×1020 cm-3 can be achieved in Si-implanted GaN. SIMS profiling showed little measurable redistribution of Si, suggesting Dsi ≤ 10-13 cm2 · s−1 at 1400 °C. The implant activation efficiency decreases at higher temperatures, which may result from SiGa to SiN site switching and resultant self-compensation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 463
Copyright
Copyright © Materials Research Society 1998

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