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Ultrafast Properties and Applications of GaAs and InP Based Materials Grown by MBE at Low Temperatures

Published online by Cambridge University Press:  15 February 2011

S. Gupta ,
G. Mourou ,
F. W. Smith  and
A. R. Calawa
S. Gupta
Affiliation:
Ultrafast Science Laboratory, Rm. 1006 IST Bldg., 2200 Bonisteel Blvd., University of Michigan, Ann Arbor, MI 48109
G. Mourou
Affiliation:
Ultrafast Science Laboratory, Rm. 1006 IST Bldg., 2200 Bonisteel Blvd., University of Michigan, Ann Arbor, MI 48109
F. W. Smith
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA
A. R. Calawa
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA
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Abstract

The ultrafast carrier dynamics in GaAs, In0.52Al0 48As on InP, and In0.53Ga0.47As on InP, grown by molecular-beam-epitaxy (MBE) at low substrate temperatures, are investigated. A reduction in the carrier lifetime is observed with decreasing growth temperatures. The shortest carrier lifetimes of typically a picosecond (ps) are obtained at the lowest growth temperature range of 150 – 200 'C. Femtosecond optical absorption and reflectance measurements have been used to verify the sub-picosecond carrier lifetimes. Photoconductive switching measurements on these materials, measured using the technique of electro-optic sampling have further confirmed the sub-picosecond carrier lifetimes, and have also resulted in the generation of subpicosecond electrical signals. These short electrical pulses have been used for a variety of ultrafast optoelectronic applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 205
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1]Smith, F. W., Calawa, A. R., Chen, C.-L., Manfra, M. J., and Mahoney, L. J., IEEE Electron. Dev. Lett. 9, 77 (1988).10.1109/55.2046Google Scholar
[2]Smith, F. W., Ph.D. Thesis, Massachusetts Institute of Technology, MA, 1990.Google Scholar
[3]Smith, F. W., Chen, C. L., Turner, G. W., Finn, M. C., Mahoney, L. J., Manfra, M. J., and Calawa, A. R., Proceedings of the IEEE Electron Devices Meeting, San Francisco, CA, Dec. 1988.Google Scholar
[4]Kaminska, M., Weber, Z. L., Weber, E. R., George, T., Kortright, J. B., Smith, F. W., Tsaur, B-Y., and Calawa, A. R., Appl. Phys. Lett. 54, 1881 (1989).10.1063/1.101229Google Scholar
[5]Melloch, M. R., Otsuka, N., Woodall, J. M., Warren, A. C., and Freeouf, J. L., Appl. Phys. Lett. 57, 1531 (1990).10.1063/1.103343Google Scholar
[6]Warren, A. C., Woodall, J. M., Freeouf, J. L., Grischkowsky, D., Mclnturff, D. T., Melloch, M. R., and Otsuka, N., Appl. Phys. Lett. 57, 1331 (1990).10.1063/1.103474Google Scholar
[7]Gupta, S., Bhattacharya, P. K., Pamulapati, J., and Mourou, G., Appl. Phys. Lett. 57, 1543 (1990).10.1063/1.103347Google Scholar
[8]Davies, G. J., Kerr, T., Tuppen, C. G., Wakefield, B., and Andrews, D. A., J. Vac. Sci. Technol. B, 219 (1984).Google Scholar
[9]Brown, A. S., Mishra, U. K., Shou, C. S., Hooper, C. E., Melendes, M. A., Thompson, M., Larson, L. E., Rosenbaum, S. E., and Delaney, M. J., IEEE Electron Dev. Lett. 10, 565 (1989).Google Scholar
[10]Claverie, A., Yu, K. M., Swider, W., Weber, Z. L., O'Keefe, M., Kilaas, R., Pamulapati, J., and Bhattacharya, P. K., to be published in Appl. Phys. Lett.Google Scholar
[11]Gupta, S., Ph.D. dissertation, University of Michigan, 1992.Google Scholar
[12]Gupta, S., Frankel, M., Valdmanis, J. A., Whitaker, J., Mourou, G., Smith, F. W. and Calawa, A. R., to be published in Appl. Phys. Lett., Dec. 1991.Google Scholar
[13]Valdmanis, J. A. and Mourou, G., IEEE Jour. of Quantum Electron. QE–22, 69 (1986).Google Scholar
[14]Valdmanis, J. A., Electronics Letters 23, 1310 (1987).10.1049/el:19870905Google Scholar
[15]Chen, Y., Williamson, S., Brock, T., Smith, F. W., and Calawa, A. R., Appl. Phys. Lett. 59, 1984 (1991).Google Scholar
[16]Gupta, S., Whitaker, J., and Mourou, G., IEEE Microwave and Guided Wave Lett. MGL–1, 161 (1991).10.1109/75.84569Google Scholar
[17]Motet, T., Nees, J., Williamson, S., and Mourou, G., Appl. Phys. Lett. 59, 1455 (1991).10.1063/1.105286Google Scholar