Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-20T00:32:05.952Z Has data issue: false hasContentIssue false
  • English
  • Français

Ultrafast All-optical Switches Based on Intersubband Transitions in GaN/AlN Multiple Quantum Wells for Tb/s Operation

Published online by Cambridge University Press:  01 February 2011

Jahan M. Dawlaty ,
Farhan Rana  and
William J. Schaff
Jahan M. Dawlaty
Affiliation:
Department of Electrical and Computer Engineering, Philips Hall, Cornell University, Ithaca, NY 14853, U.S.A
Farhan Rana
Affiliation:
Department of Electrical and Computer Engineering, Philips Hall, Cornell University, Ithaca, NY 14853, U.S.A
William J. Schaff
Affiliation:
Department of Electrical and Computer Engineering, Philips Hall, Cornell University, Ithaca, NY 14853, U.S.A
Get access

Abstract

Theoretical and experimental results on ultra-fast all-optical switches based on intersubband transitions for Tb/s operation are presented. Designs for engineering intersubband transitions (ISBT) in GaN/AlN quantum wells near communication wavelengths (∼1.55 μm) and for realizing all-optical switches requiring small pulse energies are discussed. Optimized designs show all-optical switching at Tb/s data rates with pulse energies as small as 200 fJ. Experimental realization of narrow line-width ISBT in GaN/AlN superlattices is also demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E7.3
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Skoloff, J. P., Prucnal, P. R., Glesk, I., Kane, M., IEEE Photonics Tech. Letts., 5, 787–790, 1993.Google Scholar
2. Faist, J., Capasso, F., Sirtori, C., Sivco, D. L., Hutchinson, A. L., Cho, A. Y., Appl. Phys. Letts., 66, 538–540, 1995.Google Scholar
3. Rana, F., Ram, R. J., Phys. Rev. B, 65, 125313, 2002.Google Scholar
4. Strasser, G., Gianordoli, S., Hvozdara, L., Schrenk, W., Unterrainer, K., Gornik, E., Appl. Phys. Letts., 75, 1345–1347. 1999.Google Scholar
5. Ryszhii, V., Intersubband infrared photodetectors, World Scientific, NJ, USA, 2003.Google Scholar
6. Ekins-Daukes, N. J., Kawaguchi, K., Zhang, J., Crystal Growth and Design, 2 no. 4 287–292, 2002.Google Scholar
7. Hui, R., Taherion, S., Wan, Y., Li, J., Jin, S. X., Lin, J. Y., Jiang, H. X., Appl. Phys. Letts. 82, 1326–1328, 2003.Google Scholar
8. Agrawal, G. P., Nonlinear Fiber Optics. New York: Academic, 1989, Ch. 2 and 3.Google Scholar
9. Agrawal, G.P., IEEE J. Quantum Electon. 27, 1843–1849 (1991)Google Scholar