Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T07:31:21.188Z Has data issue: false hasContentIssue false
  • English
  • Français

Ultra - Shallow p+/n Junction Formed by Plasma Ion Implantation

Published online by Cambridge University Press:  17 March 2011

Sungkweon Baek ,
Chel-Jong Choi ,
Tae-Yeon Seong ,
Hyunsang Hwang ,
H. K. Kim  and
D. W. Moon
Sungkweon Baek
Affiliation:
Department of Materials Science and Engineering Kwangju Institute of Science and Technology #1, Oryong-dong, Puk-gu, Kwangju, 500-712, KOREA
Chel-Jong Choi
Affiliation:
Department of Materials Science and Engineering Kwangju Institute of Science and Technology #1, Oryong-dong, Puk-gu, Kwangju, 500-712, KOREA
Tae-Yeon Seong
Affiliation:
Department of Materials Science and Engineering Kwangju Institute of Science and Technology #1, Oryong-dong, Puk-gu, Kwangju, 500-712, KOREA
Hyunsang Hwang
Affiliation:
Department of Materials Science and Engineering Kwangju Institute of Science and Technology #1, Oryong-dong, Puk-gu, Kwangju, 500-712, KOREA
H. K. Kim
Affiliation:
Korea Research Institute of Standards and Science P. O. Box, 102, Yusong, Taejon, 300-600, KOREA
D. W. Moon
Affiliation:
Korea Research Institute of Standards and Science P. O. Box, 102, Yusong, Taejon, 300-600, KOREA
Get access

Abstract

We have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900 °C and 950 °C, respectively. For the same junction depth, the sheet resistance of the B2H6 plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B2H6 plasma doping process can be completely removed by annealing at 950 °C for 10s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B3.7
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.The National Technology Roadmap for Semiconductors, Semiconductor Industry Association (1999).Google Scholar
2. Liu, T. M. and Oldham, W. G., IEEE Electron Device Lett., EDL–4, 59 (1983).10.1109/EDL.1983.25647Google Scholar
3. Stolk, P. A., Gossman, H. J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaraiz, M., Poate, J. M., Luftman, H. S., Haynes, T. E., J. Appl. Phys., 81(9), 6031 (1997).10.1063/1.364452Google Scholar
4. Takase, M., Yamashita, K., Hori, A. and Mizuno, B., IEEE IEDM Tech. Dig., 1997, 475 (1997).Google Scholar
5. Agarwal, A., Gossmann, H. J., Eaglesham, D. J., Herner, S. B., Fiory, A. T.. and Haynes, T. E., Appl. Phys. Lett. 74, 2435 (1999).10.1063/1.123872Google Scholar
6. Agarwal, A., Eaglessham, D. J., Gossmann, H. J., Pelaz, L., Herner, S. B., Jacobson, D. C., Haynes, T. E., Erokhin, Y., and Simonton, R., IEEE IEDM Tech. Dig., 1997, 467 (1997).Google Scholar
7. Yu, S. S., Kennel, H. W., Giles, M. D., and Packan, P. A., IEEE IEDM Tech. Dig., 1997, 509 (1997).Google Scholar
8. Suzuki, K., Aoki, M., Kataoka, Y., Sasaki, N., Hoefler, A., Feudel, T., Strecker, N. and Fichtner, W., IEEE IEDM Tech. Dig., 1996, 799 (1996).Google Scholar
9. Park, J., Huh, Y., and Hwang, H., Appl. Phys. Lett., 74, 1248 (1999).10.1063/1.123514Google Scholar