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Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV

Published online by Cambridge University Press:  10 February 2011

M. Kase ,
Y Kikuchi ,
H. Niwa  and
T. Kimura
M. Kase
Affiliation:
Fujitsu Limited, 1500 Mizono, Tado-cho, Kuwana-gun, Mie 511-0192, Japan.
Y Kikuchi
Affiliation:
Fujitsu Limited, 1500 Mizono, Tado-cho, Kuwana-gun, Mie 511-0192, Japan.
H. Niwa
Affiliation:
Fujitsu Limited, 1500 Mizono, Tado-cho, Kuwana-gun, Mie 511-0192, Japan.
T. Kimura
Affiliation:
Fujitsu Limited, 1500 Mizono, Tado-cho, Kuwana-gun, Mie 511-0192, Japan.
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Abstract

This paper describes ultra shallow junction formation using 0.5 keV B+/BF2+ implantation, which has the advantage of a reduced channeling tail and no transient enhanced diffusion. In the case of l × 1014 cm−2, 0.5 keV BF2 implantation a junction depth of 19 nm is achieved after RTA at 950°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 13
Copyright
Copyright © Materials Research Society 1998

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References

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