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Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV
Published online by Cambridge University Press: 10 February 2011
Abstract
This paper describes ultra shallow junction formation using 0.5 keV B+/BF2+ implantation, which has the advantage of a reduced channeling tail and no transient enhanced diffusion. In the case of l × 1014 cm−2, 0.5 keV BF2 implantation a junction depth of 19 nm is achieved after RTA at 950°C.
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- Research Article
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- Copyright © Materials Research Society 1998
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